MCR8DSM, MCR8DSN
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control.
Features
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•
•
•
•
Small Size
Passivated Die for Reliability and Uniformity
Low Level Triggering and Holding Characteristics
Available in Two Package Styles
Surface Mount Lead Form
−
Case 369C
Miniature Plastic Package
−
Straight Leads
−
Case 369
•
Epoxy Meets UL 94 V−0 @ 0.125 in
•
ESD Ratings:
Human Body Model, 3B
u
8000 V
Machine Model, C
u
400 V
•
Pb−Free Packages are Available
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off−State Voltage (Note 1)
(T
J
=
−40
to 110°C, Sine Wave, 50 Hz to
60 Hz)
MCR8DSM
MCR8DSN
On−State RMS Current
(180° Conduction Angles; T
C
= 90°C)
Average On−State Current
(180° Conduction Angles; T
C
= 90°C)
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T
J
= 110°C)
Circuit Fusing Consideration (t = 8.3 msec)
Forward Peak Gate Power
(Pulse Width
≤
10
msec,
T
C
= 90°C)
Forward Average Gate Power
(t = 8.3 msec, T
C
= 90°C)
Forward Peak Gate Current
(Pulse Width
≤
10
msec,
T
C
= 90°C)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
DRM,
V
RRM
Value
Unit
V
600
800
8.0
5.1
90
34
5.0
0.5
2.0
−40
to 110
−40
to 150
A
A
A
A
2
sec
W
1
P
G(AV)
I
GM
T
J
T
stg
W
A
°C
°C
2
3
4
1 2
3
SCRs
8 AMPERES RMS
600
−
800 VOLTS
G
A
K
MARKING
DIAGRAM
4
DPAK
CASE 369C
STYLE 4
YWW
CR
8DSxG
I
T(RMS)
I
T(AV)
I
TSM
I
2
t
P
GM
Y
= Year
WW
= Work Week
CR8DSx = Device Code
x= M or N
G
= Pb−Free Package
PIN ASSIGNMENT
Cathode
Anode
Gate
Anode
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for negative gate voltage; positive gate voltage shall not be applied
concurrent with negative potential on the anode. Blocking voltages shall not
be tested with a constant current source such that the voltage ratings of the
device are exceeded.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2010
October, 2010
−
Rev. 7
1
Publication Order Number:
MCR8DSM/D
MCR8DSM, MCR8DSN
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
−
Junction−to−Case
−
Junction−to−Ambient
−
Junction−to−Ambient (Note 2)
Symbol
R
qJC
R
qJA
R
qJA
T
L
Max
2.2
88
80
260
Unit
°C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
°C
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(V
AK
= Rated V
DRM
or V
RRM
; R
GK
= 1.0 kW) (Note 3)
ON CHARACTERISTICS
Peak Reverse Gate Blocking Voltage (I
GR
= 10
mA)
Peak Reverse Gate Blocking Current (V
GR
= 10 V)
Peak Forward On−State Voltage (Note 4) (I
TM
= 16 A)
Gate Trigger Current (Continuous dc) (Note 5)
(V
D
= 12 V, R
L
= 100
W)
Gate Trigger Voltage (Continuous dc) (Note 5)
(V
D
= 12 V, R
L
= 100
W)
T
J
= 25°C
T
J
=
−40°C
T
J
= 25°C
T
J
=
−40°C
T
J
= 110°C
T
J
= 25°C
T
J
=
−40°C
T
J
= 25°C
T
J
=
−40°C
V
GRM
I
RGM
V
TM
I
GT
10
−
−
5.0
−
0.45
−
0.2
0.5
−
0.5
−
−
12.5
−
1.4
12
−
0.65
−
−
1.0
−
1.0
−
2.0
18
1.2
1.8
200
300
1.0
1.5
−
mA
6.0
10
mA
6.0
10
5.0
ms
V
mA
V
mA
T
J
= 25°C
T
J
= 110°C
I
DRM
I
RRM
−
−
−
−
10
500
mA
Symbol
Min
Typ
Max
Unit
V
GT
V
Holding Current
(V
D
= 12 V, Initiating Current = 200 mA, R
GK
= 1 kW)
Latching Current
(V
D
= 12 V, I
G
= 2.0 mA, R
GK
= 1 kW)
I
H
I
L
Total Turn−On Time
(Source Voltage = 12 V, R
S
= 6.0 kW, I
T
= 16 A(pk), R
GK
= 1.0 kW)
(V
D
= Rated V
DRM
, Rise Time = 20 ns, Pulse Width = 10
ms)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(V
D
= 0.67 X Rated V
DRM
, Exponential Waveform,
R
GK
= 1.0 kW, T
J
= 110°C)
tgt
dv/dt
2.0
10
−
V/ms
2. Surface mounted on minimum recommended pad size.
3. Ratings apply for negative gate voltage or R
GK
= 1.0 kW. Devices shall not have a positive gate voltage concurrently with a negative voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage
applied exceeds the rated blocking voltage.
4. Pulse Test; Pulse Width
≤
2.0 msec, Duty Cycle
≤
2%.
5. R
GK
current not included in measurements.
ORDERING INFORMATION
Device
MCR8DSMT4
MCR8DSMT4G
MCR8DSNT4
MCR8DSNT4G
Package
DPAK
DPAK
(Pb−Free)
DPAK
DPAK
(Pb−Free)
Shipping
†
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MCR8DSM, MCR8DSN
Voltage Current Characteristic of SCR
+ Current
Anode +
V
TM
on state
I
RRM
at V
RRM
I
H
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Off−State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off−State Reverse Voltage
Peak Reverse Blocking Current
Peak On−State Voltage
Holding Current
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode
−
+ Voltage
I
DRM
at V
DRM
Forward Blocking Region
(off state)
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
P(AV) , AVERAGE POWER DISSIPATION (WATTS)
110
12
10
a
8.0
6.0
4.0
2.0
0
0
1.0
2.0
3.0
4.0
5.0
6.0
I
T(AV)
, AVERAGE ON-STATE CURRENT (AMPS)
180°
90°
60°
120°
dc
105
a
100
a
= Conduction
Angle
a
= Conduction
Angle
a
= 30°
95
dc
90
a
= 30°
85
0
1.0
2.0
3.0
4.0
5.0
6.0
I
T(AV)
, AVERAGE ON-STATE CURRENT (AMPS)
60°
90°
120°
180°
Figure 1. Average Current Derating
Figure 2. On−State Power Dissipation
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3
MCR8DSM, MCR8DSN
I T, INSTANTANEOUS ON-STATE CURRENT (AMPS)
100
MAXIMUM @ T
J
= 110°C
10
r(t) , TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
TYPICAL @ T
J
= 25°C
1.0
0.1
Z
qJC(t)
= R
qJC(t)
Sr(t)
MAXIMUM @ T
J
= 25°C
1.0
0.1
0
1.0
2.0
3.0
4.0
5.0
V
T
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
0.01
0.1
1.0
10
100
1000
10 K
t, TIME (ms)
Figure 3. On−State Characteristics
Figure 4. Transient Thermal Response
1000
VGT, GATE TRIGGER VOLTAGE (VOLTS)
I GT, GATE TRIGGER CURRENT (
m
A)
1.0
R
GK
= 1.0 KW
100
10
GATE OPEN
1.0
-40 -25
0.1
-10
5.0
20
35
50
65
80
95
110
-40 -25
-10
5.0
20
35
50
65
80
95
110
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Gate Trigger Current versus
Junction Temperature
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
10
R
GK
= 1.0 KW
IH , HOLDING CURRENT (mA)
IL, LATCHING CURRENT (mA)
10
R
GK
= 1.0 KW
1.0
1.0
0.1
-40 -25
-10
5.0
20
35
50
65
80
95
110
0.1
-40 -25
-10
5.0
20
35
50
65
80
95
110
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Holding Current versus
Junction Temperature
Figure 8. Typical Latching Current versus
Junction Temperature
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4
MCR8DSM, MCR8DSN
10
T
J
= 25°C
IH, HOLDING CURRENT (mA)
8.0
STATIC dv/dt (V/
m
s)
100
70°C
90°C
T
J
= 110°C
10
1000
6.0
I
GT
= 25
mA
4.0
I
GT
= 10
mA
2.0
0
100
1.0
1000
R
GK
, GATE-CATHODE RESISTANCE (OHMS)
10 K
100
R
GK
, GATE-CATHODE RESISTANCE (OHMS)
1000
Figure 9. Holding Current versus
Gate−Cathode Resistance
Figure 10. Exponential Static dv/dt versus
Gate−Cathode Resistance and Junction
Temperature
1000
T
J
= 110°C
400 V
STATIC dv/dt (V/
m
s)
100
1000
V
D
= 800 V
T
J
= 110°C
STATIC dv/dt (V/
m
s)
100
I
GT
= 25
mA
600 V
V
PK
= 800 V
I
GT
= 10
mA
10
10
1.0
100
R
GK
, GATE-CATHODE RESISTANCE (OHMS)
1000
1.0
100
R
GK
, GATE-CATHODE RESISTANCE (OHMS)
1000
Figure 11. Exponential Static dv/dt versus
Gate−Cathode Resistance and Peak Voltage
Figure 12. Exponential Static dv/dt versus
Gate−Cathode Resistance and Gate Trigger
Current Sensitivity
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