Ordering number : ENA1638B
BFL4001
N-Channel Power MOSFET
900V, 6.5A, 2.7
Ω
, TO-220F-3FS
Features
•
•
http://onsemi.com
ON-resistance RDS(on)=2.1
Ω
(typ.)
10V drive
•
Input capacitance Ciss=850pF (typ.)
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *4
Avalanche Current *5
Symbol
VDSS
VGSS
IDc*1
IDpack*2
IDP
PD
Tch
Tstg
EAS
IAV
Limited only by maximum temperature Tch=150°C
Tc=25°C (Our ideal heat dissipation condition)*3
PW≤10μs, duty cycle≤1%
Tc=25°C (Our ideal heat dissipation condition)*3
Conditions
Ratings
900
±30
6.5
4.1
13
2.0
37
150
--55 to +150
223
6.5
Unit
V
V
A
A
A
W
W
°C
°C
mJ
A
Note :
*1
Shows chip capability
*2
Package limited
*3
Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
VDD=50V, L=10mH, IAV=6.5A
*4
*5
L
≤
10mH, single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7528-001
10.16
3.18
3.3
4.7
2.54
Product & Package Information
• Package
: TO-220F-3FS
• JEITA, JEDEC
: SC-67
• Minimum Packing Quantity : 50 pcs./magazine
BFL4001-1E
Marking
Electrical Connection
2
15.8
3.23
15.87
6.68
FL4001
LOT No.
1
2.76
1.47 MAX
0.8
1
2
3
12.98
3
0.5
1 : Gate
2 : Drain
3 : Source
TO-220F-3FS
2.54
2.54
Semiconductor Components Industries, LLC, 2013
July, 2013
62712 TKIM/22912 TKIM TC-00002729/31010QB TKIM TC-00002256 No. A1638-1/7
BFL4001
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=6.5A, VGS=0V
VDS=200V, VGS=10V, ID=6.5A
See specified Test Circuit.
VDS=30V, f=1MHz
Conditions
ID=10mA, VGS=0V
VDS=720V, VGS=0V
VGS=±30V, VDS=0V
VDS=10V, ID=1mA
VDS=20V, ID=3.25A
ID=3.25A, VGS=10V
2.0
1.8
3.6
2.1
850
130
43
19
49
156
52
44
7.0
22
0.85
1.2
2.7
Ratings
min
900
1.0
±100
4.0
typ
max
Unit
V
mA
nA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
PW=10μs
D.C.≤0.5%
VGS=10V
D
VDD=200V
Avalanche Resistance Test Circuit
L
ID=3.25A
RL=61.5Ω
VOUT
10V
0V
BFL4001
BFL4001
50Ω
VDD
≥50Ω
RG
G
P.G
RGS=50Ω
S
Ordering Information
Device
BFL4001-1E
Package
TO-220F-3FS
Shipping
50pcs./magazine
memo
Pb Free
No. A1638-2/7
BFL4001
14
12
ID -- VDS
Tc=25
°
C
10V
14
12
ID -- VGS
VDS=20V
Tc= --25
°
C
Drain Current, ID -- A
Drain Current, ID -- A
10
8
6
20V
7V
10
8
6
4
2
0
25
°
C
75
°
C
6V
4
2
0
5V
VGS=4V
0
5
10
15
20
25
30
35
40
0
1
2
3
4
5
6
7
8
9
10
Drain-to-Source Voltage, VDS -- V
6
RDS(on) -- VGS
IT15294
7
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Tc
IT15295
ID=3.25A
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
5
6
5
4
3
2
1
0
--50
4
Tc=75
°
C
3
2
25
°
C
--25
°
C
=
V GS
A
.25
=3
, ID
10V
1
0
4
5
6
7
8
9
10
11
12
13
14
15
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, VGS -- V
7
|
y
fs
|
-- ID
IT15296
3
2
10
7
5
3
2
1.0
7
5
Case Temperature, Tc --
°
C
IS -- VSD
IT15297
Forward Transfer Admittance,
|
y
fs
|
-- S
5
3
2
1.0
7
5
3
2
0.1
VDS=20V
VGS=0V
=
Tc
C
5
°
--2
°
C
75
Source Current, IS -- A
°
C
25
0.1
7
5
3
2
7
5
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Drain Current, ID -- A
7
5
SW Time -- ID
5 7 10
IT15298
0.01
0.2
0.4
Tc=
7
3
2
0.6
--25
°
C
0.8
5
°
C
25
°
C
1.0
1.2
IT15299
VDD=200V
VGS=10V
Ciss, Coss, Crss -- pF
5
3
2
Ciss, Coss, Crss -- VDS
Diode Forward Voltage, VSD -- V
f=1MHz
Switching Time, SW Time -- ns
3
2
td (off)
1000
7
5
3
2
100
7
5
3
Ciss
100
7
5
3
2
tf
tr
Coss
Crs
s
td(on)
10
7
0.1
2
3
5
7 1.0
2
3
5
7
10
2
3
2
10
0
5
10
15
20
25
30
35
40
45
50
Drain Current, ID -- A
IT15300
Drain-to-Source Voltage, VDS -- V
IT15301
No. A1638-3/7
BFL4001
10
9
VGS -- Qg
VDS=200V
ID=6.5A
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
8
7
6
5
4
3
2
1
0
0
5
10
15
20
25
30
35
40
45
50
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
ASO
IDP=13A (PW≤10μs)
IDc(*1)=6.5A
IDpack(*2)=4.1A
10
1m
10
s
m
DC
100
s
ms
op
er
ati
on
10
μ
s
0
μ
s
Operation in
this area is
limited by RDS(on).
Tc=25°C
Single pulse
2 3
5 7 1.0
0.01
0.1
*1.
Shows chip capability
*2.
Our ideal heat dissipation condition
2 3
5 7 10
2 3
5 7 100
2 3
Total Gate Charge, Qg -- nC
2.5
PD -- Ta
IT15302
40
Drain-to-Source Voltage, VDS -- V
PD -- Tc
5 71000
IT16791
Allowable Power Dissipation, PD -- W
2.0
Allowable Power Dissipation, PD -- W
37
35
30
25
20
15
10
5
0
1.5
1.0
0.5
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
120
EAS -- Ta
IT15304
Case Temperature, Tc --
°C
IT15305
Avalanche Energy derating factor -- %
100
80
60
40
20
0
0
25
50
75
100
125
150
175
IT10478
Ambient Temperature, Ta --
°C
No. A1638-4/7
BFL4001
Magazine Specification
BFL4001-1E
No. A1638-5/7
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