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2N7002CK
60 V, 0.3 A N-channel Trench MOSFET
Rev. 01 — 11 September 2009
Product data sheet
1. Product profile
1.1 General description
ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a
small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features
I
I
I
I
Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 3 kV
1.3 Applications
I
I
I
I
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
I
DM
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
peak drain current
drain-source on-state
resistance
single pulse;
t
p
≤
10
µs
V
GS
= 10 V;
I
D
= 500 mA
Conditions
Min
-
-
-
-
Typ
-
-
-
1.1
Max
60
300
1.2
1.6
Unit
V
mA
A
Ω
NXP Semiconductors
2N7002CK
60 V, 0.3 A N-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Symbol
G
S
D
Description
gate
source
drain
1
2
G
Simplified outline
3
Graphic symbol
D
S
017aaa000
3. Ordering information
Table 3.
Ordering information
Package
Name
2N7002CK
Description
Version
SOT23
TO-236AB plastic surface-mounted package; 3 leads
Type number
4. Marking
Table 4.
2N7002CK
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
LP*
Type number
2N7002CK_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 11 September 2009
2 of 13
NXP Semiconductors
2N7002CK
60 V, 0.3 A N-channel Trench MOSFET
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= 10 V
T
amb
= 25
°C
T
amb
= 100
°C
I
DM
P
tot
T
j
T
amb
T
stg
I
S
I
SM
V
ESD
peak drain current
total power dissipation
junction temperature
ambient temperature
storage temperature
source current
peak source current
electrostatic discharge
voltage
T
amb
= 25
°C
T
amb
= 25
°C;
t
p
≤
10
µs
all pins;
human body model;
C = 100 pF;
R = 1.5 kΩ
−55
−65
-
-
-
T
amb
= 25
°C;
t
p
≤
10
µs
T
amb
= 25
°C
[1]
Conditions
25
°C ≤
T
j
≤
150
°C
Min
-
-
-
-
-
-
Max
60
±20
300
190
1.2
350
150
+150
+150
200
1.2
3
Unit
V
V
mA
mA
A
mW
°C
°C
°C
mA
A
kV
Source-drain diode
ElectroStatic Discharge (ESD)
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad
for drain 1 cm
2
.
120
P
der
(%)
80
017aaa001
120
I
der
(%)
80
017aaa002
40
40
0
−75
−25
25
75
125
175
T
amb
(°C)
0
−75
−25
25
75
125
175
T
amb
(°C)
P
tot
P
der
=
-----------------------
×
100
%
-
P
tot
(
25°C
)
Fig 1.
Normalized total power dissipation as a
function of ambient temperature
Fig 2.
I
D
I
der
=
-------------------
×
100
%
-
I
D
(
25°C
)
Normalized continuous drain current as a
function of ambient temperature
© NXP B.V. 2009. All rights reserved.
2N7002CK_1
Product data sheet
Rev. 01 — 11 September 2009
3 of 13
NXP Semiconductors
2N7002CK
60 V, 0.3 A N-channel Trench MOSFET
10
I
D
(A)
1
Limit R
DSon
= V
DS
/I
D
017aaa003
t
p
= 10
µs
100
µs
10
−1
DC
1 ms
10 ms
100 ms
10
−2
10
−1
1
10
V
DS
(V)
10
2
T
sp
= 25
°C;
I
DM
= single pulse; V
GS
= 10 V
Fig 3.
Safe operating area; junction to solder point; continuous and peak drain currents as a function of
drain-source voltage
10
017aaa004
I
D
(A)
1
Limit R
DSon
= V
DS
/I
D
t
p
= 10
µs
100
µs
10
−1
DC
10
−2
1 ms
10 ms
100 ms
10
−3
10
−1
1
10
V
DS
(V)
10
2
T
amb
= 25
°C;
I
DM
= single pulse; V
GS
= 10 V
Fig 4.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of
drain-source voltage
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1]
Min
-
Typ
350
Max
500
Unit
K/W
2N7002CK_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 11 September 2009
4 of 13
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