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Datasheet> All Categories > Discrete semiconductor> diode> MSCD165-12
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MSCD165-12

Description
Discrete Semiconductor Modules Power Module - Diode
CategoryDiscrete semiconductor    diode   
File Size138KB，4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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MSCD165-12 Overview

Discrete Semiconductor Modules Power Module - Diode

MSCD165-12 Parametric

Parameter NameAttribute value
MakerMicrosemi
package instructionR-XUFM-X3
Contacts3
Manufacturer packaging codeCASE D2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.4 V
JESD-30 codeR-XUFM-X3
Maximum non-repetitive peak forward current6000 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current165 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1200 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER

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MSKD165 ; MSAD165 ; MSCD165
Glass Passivated Rectifier
Diode Modules
V
RRM
800 to 1800V
I
FAV
165 Amp
Applications
Non-controllable rectifiers for AC/AC
converters
Line rectifiers for transistorized AC motor
controllers
Field supply for DC motors
Circuit
Features
Blocking voltage:800 to 1800V
Heat transfer through aluminum oxide DBC
ceramic isolated metal baseplate
Glass passivated chip
UL E243882 approved
Module Type
TYPE
MSCD165-08
MSCD165-12
MSCD165-16
MSCD165-18
MSAD165-08
MSAD165-12
MSAD165-16
MSAD165-18
MSKD165-08
MSKD165-12
MSKD165-16
MSKD165-18
V
RRM
800V
1200V
1600V
1800V
V
RSM
900V
1300V
1700V
1900V
Maximum Ratings
Symbol
Conditions
Single phase ,half wave 180°conduction Tc=101℃
I
FAV
Single phase ,half wave 180°conduction Tc=101℃
I
F(RMS)
t=10mS Tvj =45℃
I
FSM
t=10mS Tvj =45℃
i
2
t
a.c.50HZ;r.m.s.;1min
V
isol
T
vj
T
stg
Mt
Ms
Weight
To terminals(M6)
To heatsink(M6)
Values
165
220
6000
180000
3000
-40 to +150
-40 to +125
5±15%
5±15%
160
Units
A
A
A
A
2
s
V
℃
℃
Nm
Nm
g
Module (Approximately)
Thermal Characteristics
Symbol
Per diode
R
th(j-c)
Module
R
th(c-s)
Electrical Characteristics
Symbol
V
FM
I
RD
Conditions
Values
0.21
0.05
Units
℃/W
℃/W
Conditions
T=25℃ I
F
=300A
T
vj
=150℃ V
RD
=V
RRM
1/3
Values
Min.
－
－
Typ.
1.20
－
Max.
1.40
9
Units
V
mA
MSKD165_MSAD165_MSCD165-Rev2
Oct, 2011
www.microsemi.com

MSCD165-12 Related Products

MSCD165-12 MSAD165-12 MSAD165-16
Description Discrete Semiconductor Modules Power Module - Diode Discrete Semiconductor Modules Power Module - Diode Discrete Semiconductor Modules Power Module - Diode
Maker Microsemi Microsemi Microsemi
package instruction R-XUFM-X3 R-XUFM-X3 R-XUFM-X3
Contacts 3 3 3
Manufacturer packaging code CASE D2 CASE D2 CASE D2
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Other features UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection ISOLATED ISOLATED ISOLATED
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code R-XUFM-X3 R-XUFM-X3 R-XUFM-X3
Maximum non-repetitive peak forward current 6000 A 6000 A 6000 A
Number of components 2 2 2
Phase 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Minimum operating temperature -40 °C -40 °C -40 °C
Maximum output current 165 A 165 A 165 A
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Certification status Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 1200 V 1200 V 1600 V
surface mount NO NO NO
Terminal form UNSPECIFIED UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER UPPER
Maximum forward voltage (VF) 1.4 V 1.4 V -

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