HCF4053B
TRIPLE 2-CHANNEL
ANALOG MULTIPLEXER/DEMULTIPLEXER
s
s
s
s
s
s
s
s
s
s
s
s
LOW "ON" RESISTANCE : 125Ω (Typ.)
OVER 15V p.p SIGNAL-INPUT RANGE FOR
V
DD
- V
EE
= 15V
HIGH "OFF" RESISTANCE : CHANNEL
LEAKAGE
±
100pA (Typ.) at V
DD
- V
EE
= 18V
BINARY ADDRESS DECODING ON CHIP
HIGH DEGREE OF LINEARITY : < 0.5%
DISTORTION TYP. at f
IS
= 1KHz, V
IS
= 5 V
pp
,
V
DD
- V
SS
> 10V, RL = 10KΩ
VERY LOW QUIESCENT POWER
DISSIPATION UNDER ALL DIGITAL
CONTROL INPUT AND SUPPLY
CONDITIONS : 0.2
µ
W (Typ.)
at V
DD
- V
SS
= V
DD
- V
EE
=10V
MATCHED SWITCH CHARACTERISTICS :
R
ON
= 5Ω (Typ.) FOR V
DD
- V
EE
= 15V
WIDE RANGE OF DIGITAL AND ANALOG
SIGNAL LEVELS : DIGITAL 3 to 20,
ANALOG TO 20V p.p.
QUIESCENT CURRENT SPECIF. UP TO 20V
5V, 10V AND 15V PARAMETRIC RATINGS
INPUT LEAKAGE CURRENT
I
I
= 100nA (MAX) AT V
DD
= 18V T
A
= 25°C
100% TESTED FOR QUIESCENT CURRENT
MEETS ALL REQUIREMENTS OF JEDEC
JESD13B " STANDARD SPECIFICATIONS
FOR DESCRIPTION OF B SERIES CMOS
DEVICES"
DIP
SOP
ORDER CODES
PACKAGE
DIP
SOP
TUBE
HCF4053BEY
HCF4053BM1
T&R
HCF4053M013TR
DESCRIPTION
The HCF4053B is a monolithic integrated circuit
fabricated in Metal Oxide Semiconductor
PIN CONNECTION
technology available in DIP and SOP packages.
The HCF4053B analog multiplexer/demultiplexer
is a digitally controlled analog switch having low
ON impedance and very low OFF leakage current.
This multiplexer circuit dissipate extremely low
quiescent power over the full V
DD
- V
SS
and V
DD
-
V
EE
supply voltage range, independent of the
logic state of the control signals.
When a logic "1" is present at the inhibit input
terminal all channel are off. This device is a triple
2-channel multiplexer having three separate
digital control inputs, A, B, and C, and an inhibit
input. Each control input selects one of a pair of
channels which are connected in a single pole
double-throw configuration.
October 2002
1/10
HCF4053B
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DD
V
I
I
I
P
D
T
op
T
stg
Supply Voltage
DC Input Voltage
DC Input Current
Power Dissipation per Package
Power Dissipation per Output Transistor
Operating Temperature
Storage Temperature
Parameter
Value
-0.5 to +22
-0.5 to V
DD
+ 0.5
±
10
500 (*)
100
-55 to +125
-65 to +150
Unit
V
V
mA
mW
mW
°C
°C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
All voltage values are referred to V
SS
pin voltage.
(*) 500mW at 65
°
C; derate to 300mW by 10mW/
°
C from 65
°
C to 85
°
C
RECOMMENDED OPERATING CONDITIONS
Symbol
V
DD
V
I
T
op
Supply Voltage
Input Voltage
Operating Temperature
Parameter
Value
3 to 20
0 to V
DD
-55 to 125
Unit
V
V
°C
3/10
RF/Wirelessly
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