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BC639

Description
Bipolar Transistors - BJT 500mA 80V NPN
CategoryDiscrete semiconductor    The transistor   
File Size93KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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Bipolar Transistors - BJT 500mA 80V NPN

BC639 Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Contains lead
MakerON Semiconductor
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Manufacturer packaging code29-11
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time1 week
Samacsys DescriptionNPN Epitaxial Silicon Transistor
Maximum collector current (IC)1 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)240
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.8 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
BC637, BC639, BC639-16
High Current Transistors
NPN Silicon
Features
These are Pb−Free Devices*
http://onsemi.com
COLLECTOR
2
MAXIMUM RATINGS
Rating
Collector - Emitter Voltage
BC637
BC639
BC637
BC639
Symbol
V
CEO
Value
60
80
60
80
5.0
1.0
625
5.0
800
12
−55
to +150
Unit
Vdc
1
EMITTER
3
BASE
Collector - Base Voltage
V
CBO
Vdc
Emitter - Base Voltage
Collector Current
Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
V
EBO
I
C
P
D
P
D
T
J
, T
stg
Vdc
Adc
mW
mW/°C
mW
mW/°C
°C
TO−92
CASE 29
STYLE 14
12
1
2
3
STRAIGHT LEAD
BULK PACK
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAMS
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
BC
63x
AYWW
G
G
BC63
9−16
AYWW
G
G
x
= 7 or 9
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2011
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
February, 2011
Rev. 1
1
Publication Order Number:
BC637/D

BC639 Related Products

BC639 BC639ZL1 BC637
Description Bipolar Transistors - BJT 500mA 80V NPN Bipolar Transistors - BJT 500mA 80V NPN Bipolar Transistors - BJT 500mA 60V NPN
Maker ON Semiconductor ON Semiconductor ON Semiconductor
Parts packaging code TO-92 TO-92 TO-92
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Contacts 3 3 3
Manufacturer packaging code 29-11 CASE 29-11 29-11
Reach Compliance Code not_compliant not_compliant not_compliant
Maximum collector current (IC) 1 A 1 A 1 A
Collector-emitter maximum voltage 80 V 80 V 60 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 40 40 40
JEDEC-95 code TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) 240 240 240
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 0.8 W 0.625 W 0.8 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature 30 30 30
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz 200 MHz
Brand Name ON Semiconductor - ON Semiconductor
Is it lead-free? Contains lead - Contains lead
ECCN code EAR99 EAR99 -
Factory Lead Time 1 week - 1 week
Samacsys Description NPN Epitaxial Silicon Transistor - NPN Epitaxial Silicon Transistor

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