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IPD33CN10N-G

Description
MOSFET N-Ch 100V 27A DPAK-2 OptiMOS 2
Categorysemiconductor    Discrete semiconductor   
File Size834KB,12 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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IPD33CN10N-G Overview

MOSFET N-Ch 100V 27A DPAK-2 OptiMOS 2

IPD33CN10N-G Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-252-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current27 A
Rds On - Drain-Source Resistance25 mOhms
Vgs th - Gate-Source Threshold Voltage2 V
Vgs - Gate-Source Voltage20 V
Qg - Gate Charge24 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
ConfigurationSingle
QualificationAEC-Q100
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
Height2.3 mm
Length6.5 mm
Transistor Type1 N-Channel
Width6.22 mm
Forward Transconductance - Min15 S
Fall Time4 ns
Moisture SensitiveYes
Pd - Power Dissipation58 W
Rise Time21 ns
Factory Pack Quantity2500
Typical Turn-Off Delay Time17 ns
Typical Turn-On Delay Time11 ns
Unit Weight0.139332 oz
IPB34CN10N G
IPI35CN10N G
IPD33CN10N G
IPP35CN10N G
OptiMOS
2 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1)
for target application
Product Summary
V
DS
R
DS(on),max (TO252)
I
D
100
33
27
V
mW
A
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPB34CN10N G
IPD33CN10N G
IPI35CN10N G
IPP35CN10N G
Package
Marking
PG-TO263-3
34CN10N
PG-TO252-3
33CN10N
PG-TO262-3
35CN10N
PG-TO220-3
35CN10N
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
Pulsed drain current
2)
Avalanche energy, single pulse
Gate source voltage
3)
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
2)
Value
27
20
108
47
±20
Unit
A
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
I
D
=27 A,
R
GS
=25
W
mJ
V
W
°C
T
C
=25 °C
58
-55 ... 175
55/175/56
J-STD20 and JESD22
see figure 3
3)
T
jmax
=150°C and duty cycle D=0.01 for Vgs<-5V
Rev. 1.091
page 1
2013-07-25

IPD33CN10N-G Related Products

IPD33CN10N-G IPD33CN10NGATMA1 IPD33CN10NGBUMA1
Description MOSFET N-Ch 100V 27A DPAK-2 OptiMOS 2 MOSFET MV POWER MOS MOSFET N-Ch 100V 27A DPAK-2 OptiMOS 2
Configuration Single SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Is it lead-free? - Lead free Contains lead
Is it Rohs certified? - conform to conform to
Maker - Infineon Infineon
package instruction - SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code - not_compliant compliant
Is Samacsys - N N
Avalanche Energy Efficiency Rating (Eas) - 47 mJ 47 mJ
Shell connection - DRAIN DRAIN
Minimum drain-source breakdown voltage - 100 V 100 V
Maximum drain current (ID) - 27 A 27 A
Maximum drain-source on-resistance - 0.033 Ω 0.033 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code - TO-252AA TO-252AA
JESD-30 code - R-PSSO-G2 R-PSSO-G2
Number of components - 1 1
Number of terminals - 2 2
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature - 175 °C 175 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED
Polarity/channel type - N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) - 108 A 108 A
surface mount - YES YES
Terminal form - GULL WING GULL WING
Terminal location - SINGLE SINGLE
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED
transistor applications - SWITCHING SWITCHING
Transistor component materials - SILICON SILICON
Base Number Matches - 1 1
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