BD436G, BD438G, BD440G,
BD442G
Plastic Medium Power
Silicon PNP Transistor
This series of plastic, medium−power silicon PNP transistors can be
used for for amplifier and switching applications. Complementary
types are BD437 and BD441.
Features
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•
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
BD436G
BD438G
BD440G
BD442G
Collector−Base Voltage
BD436G
BD438G
BD440G
BD442G
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
32
45
60
80
V
CBO
32
45
60
80
V
EBO
I
C
I
B
P
D
36
288
T
J
, T
stg
– 55 to + 150
W
W/°C
°C
5.0
4.0
1.0
Vdc
Adc
Adc
Vdc
Value
Unit
Vdc
4.0 AMP POWER
TRANSISTORS PNP SILICON
COLLECTOR 2, 4
BASE 3
EMITTER 1
TO−225
CASE 77−09
STYLE 1
1 2
3
MARKING DIAGRAM
YWW
BD4xxG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Y
WW
BD4xx
G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
R
qJC
Max
3.5
Unit
°C/W
= Year
= Work Week
= Device Code
xx = 36, 36T, 38, 38T, 40, 42
= Pb−Free Package
ORDERING INFORMATION
Device
BD436G
BD436TG
BD438G
BD438TG
BD440G
Package
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
TO−225
(Pb−Free)
Shipping
500 Units/Box
50 Units/Rail
500 Units/Box
50 Units/Rail
500 Units/Box
500 Units/Box
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
BD442G
1
December, 2013 − Rev. 16
Publication Order Number:
BD438/D
BD436G, BD438G, BD440G, BD442G
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Collector−Emitter Breakdown Voltage
(I
C
= 100 mA, I
B
= 0)
BD436G
BD438G
BD440G
BD442G
Collector−Base Breakdown Voltage
(I
C
= 100
mA,
I
B
= 0)
BD436G
BD438G
BD440G
BD442G
Emitter−Base Breakdown Voltage
(I
E
= 100
mA,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 32 V, I
E
= 0)
BD436G
(V
CB
= 45 V, I
E
= 0)
BD438G
(V
CB
= 60 V, I
E
= 0)
BD440G
(V
CB
= 80 V, I
E
= 0)
BD442G
Emitter Cutoff Current
(V
EB
= 5.0 V)
DC Current Gain
(I
C
= 10 mA, V
CE
= 5.0 V)
BD436G
BD438G
BD440G
BD442G
DC Current Gain
(I
C
= 500 mA, V
CE
= 1.0 V)
BD436G
BD438G
BD440G
BD442G
DC Current Gain
(I
C
= 2.0 A, V
CE
= 1.0 V)
BD436G
BD438G
BD440G
BD442G
Collector Saturation Voltage
(I
C
= 2.0 A, I
B
= 0.2 A)
BD436G
(I
C
= 3.0 A, I
B
= 0.3 A)
BD438G
BD440G
BD442G
Base−Emitter On Voltage
(I
C
= 2.0 A, V
CE
= 1.0 V)
BD436G/BD438G
BD440G/BD442G
Current−Gain − Bandwidth Product
(V
CE
= 1.0 V, I
C
= 250 mA, f = 1.0 MHz)
Symbol
V
(BR)CEO
32
45
60
80
V
(BR)CBO
32
45
60
80
V
(BR)EBO
5.0
I
CBO
−
−
−
−
I
EBO
−
h
FE
40
30
20
15
h
FE
85
85
40
40
h
FE
50
40
25
15
V
CE(sat)
−
−
−
−
V
BE(ON)
−
−
f
T
3.0
−
−
−
−
1.1
1.5
MHz
−
−
−
−
0.5
0.7
0.8
0.8
Vdc
−
−
−
−
−
−
−
−
Vdc
−
−
−
−
475
475
475
475
−
−
−
−
−
−
−
−
−
−
−
1.0
−
−
−
−
−
0.1
0.1
0.1
0.1
mAdc
−
−
mAdc
−
−
−
−
−
−
−
−
Vdc
−
−
−
−
−
−
−
−
Vdc
Min
Typ
Max
Unit
Vdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
BD436G, BD438G, BD440G, BD442G
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
2.0
1.6
I
C
= 10 mA
100 mA
1.0 A
3.0 A
1.2
0.8
T
J
=
255C
0.4
0
0.05 0.070.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I
B
, BASE CURRENT (mA)
20
30
50 70 100
200
300
500
Figure 1. Collector Saturation Region
hFE CURRENT GAIN (NORMALIZED)
,
200
100
80
60
40
20
0
10
2
3
100
I
C
, COLLECTOR CURRENT (AMP)
1
5
Figure 2. Current Gain
T
J
= 25°C
1.6
VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMP)
2.0
10
4.0
T
J
= 150°C
1.0
0.5
dc
SECONDARY BREAKDOWN
THERMAL LIMIT T
C
= 25°C
BONDING WIRE LIMIT
5 ms
1.2
0.8
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 2.0 V
CURVES APPLY BELOW RATED V
CEO
BD438
BD440
BD442
1.0
2.0
5.0
10
20
50
100
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.4
V
CE(sat)
@ I
C
/I
B
= 10
0
0.005 0.01 0.02 0.03 0.05
0.1 0.2 0.3 0.5
1.0 2.0 3.0 4.0
0.1
I
C
, COLLECTOR CURRENT (AMP)
Figure 3. “On” Voltage
Figure 4. Active Region Safe Operating Area
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3
BD436G, BD438G, BD440G, BD442G
PACKAGE DIMENSIONS
4
TO−225
CASE 77−09
ISSUE AC
1 2
3
FRONT VIEW
3 2
1
BACK VIEW
E
A1
Q
A
PIN 4
BACKSIDE TAB
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
DIM
A
A1
b
b2
c
D
E
e
L
L1
P
Q
MILLIMETERS
MIN
MAX
2.40
3.00
1.00
1.50
0.60
0.90
0.51
0.88
0.39
0.63
10.60
11.10
7.40
7.80
2.04
2.54
14.50
16.63
1.27
2.54
2.90
3.30
3.80
4.20
D
P
1
2
3
L1
L
STYLE 1:
PIN 1. EMITTER
2., 4. COLLECTOR
3. BASE
2X
b2
2X
e
b
FRONT VIEW
c
SIDE VIEW
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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BD438/D
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