IRF737LC, SiHF737LC
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
17
4.8
7.6
Single
D
FEATURES
300
0.75
•
•
•
•
•
•
Reduced Gate Drive Requirement
Enhanced 30 V V
GS
Rating
Reduced C
iss
, C
oss
, C
rss
Extremely High Frequency Operation
Repetitive Avalanche Rated
Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
This new series of low charge Power MOSFETs achieve
significantly lower gate charge over conventional Power
MOSFETs. Utilizing the new LCDMOS technology, the
device improvements are achieved without added product
cost, allowing for reduced gate drive requirements and total
system savings. In addition, reduced switching losses and
improved efficiency are achievable in a variety of high
frequency applications. Frequencies of a few MHz at high
current are possible using the new low charge Power
MOSFETs.
These device improvements combined with the proven
ruggedness and reliability that are characteristics of Power
MOSFETs offer the designer a new standard in power
transistors for switching applications.
TO-220
G
S
G
D
S
N-Channel
MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220
IRF737LCPbF
SiHF737LC-E3
IRF737LC
SiHF737LC
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Avalanche Current
a
Repetiitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
LIMIT
300
± 30
6.1
3.9
24
0.59
120
6.1
7.4
74
3.4
- 55 to + 150
300
d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
T
C
= 25 °C
for 10 s
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 5.7 mH, R
G
= 25
Ω,
I
AS
= 6.1 A (see fig. 12).
c. I
SD
≤
6.1 A, dI/dt
≤
270 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91050
S-82998-Rev. A, 12-Jan-09
www.vishay.com
1
IRF737LC, SiHF737LC
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
0.50
-
MAX.
62
-
1.7
°C/W
UNIT
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= ± 20 V
V
DS
= 300 V, V
GS
= 0 V
V
DS
= 240 V, V
GS
= 0 V, T
J
= 150 °C
V
GS
= 10 V
I
D
= 3.7 A
b
V
DS
= 50 V, I
D
= 3.7 A
b
300
-
2.0
-
-
-
-
2.7
-
0.391
-
-
-
-
-
-
-
-
4.0
± 100
25
250
0.75
-
V
V/°C
V
nA
µA
Ω
S
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
-
-
-
-
430
120
9.2
-
-
-
6.6
21
13
12
4.5
7.5
-
-
-
17
4.8
7.6
-
-
-
-
-
nH
-
ns
nC
pF
V
GS
= 10 V
I
D
= 6.1 A, V
DS
= 240 V,
see fig. 6 and 13
b
-
-
-
V
DD
= 150 V, I
D
= 6.1 A,
R
G
= 12
Ω,
R
D
= 24
Ω,
see fig. 10
b
-
-
-
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
G
-
S
-
-
-
-
-
-
-
-
320
1.5
6.1
A
24
1.6
490
2.2
V
ns
µC
G
S
T
J
= 25 °C, I
S
= 6.1 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 6.1 A, dI/dt = 100 A/µs
b
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤
300 µs; duty cycle
≤
2 %.
www.vishay.com
2
Document Number: 91050
S-82998-Rev. A, 12-Jan-09
IRF737LC, SiHF737LC
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
2
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
10
1
V
GS
Top
15
V
10
V
8.0 V
7.0
V
6.0
V
5.5
V
5.0
V
Bottom 4.5
V
10
2
10
T
J
= 150
°
C
1
T
J
= 25
°
C
4.5
V
0.1
20
µs
Pulse
Width
T
C
=
25 °C
1
10
10
2
0.1
20
µs
Pulse
Width
V
DS
=
50
V
4
5
6
7
8
9
10
10
-2
0.1
91050_01
10
-2
V
DS
, Drain-to-Source
Voltage
(V)
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
91050_03
V
GS,
Gate-to-Source
Voltage
(V)
Fig. 3 - Typical Transfer Characteristics
10
2
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain-to-Source Current (A)
V
GS
Top
15
V
10
V
8.0 V
10
7.0
V
6.0
V
5.5
V
5.0
V
1
Bottom 4.5
V
3.0
2.5
2.0
1.5
1.0
0.5
I
D
= 6.1 A
V
GS
= 10
V
4.5
V
0.1
20
µs
Pulse
Width
T
C
=
150 °C
0.1
1
10
10
2
10
-2
91050_02
0.0
- 60 - 40 - 20 0
20 40 60
80
100 120 140 160
V
DS,
Drain-to-Source
Voltage
(V)
91050_04
T
J,
Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Document Number: 91050
S-82998-Rev. A, 12-Jan-09
www.vishay.com
3
IRF737LC, SiHF737LC
Vishay Siliconix
800
700
C, Capacitance (pF)
600
500
400
300
200
100
0
1
I
SD
, Reverse Drain Current (A)
V
GS
= 0
V,
f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
iss
10
2
10
T
J
= 150
°
C
T
J
= 25
°
C
1
C
oss
C
rss
10
10
2
0.1
0.2
91050_07
V
GS
= 0
V
0.4
0.6
0.8
1.0
1.2
1.4
91050_05
V
DS,
Drain-to-Source
Voltage
(V)
V
SD
, Source-to-Drain
Voltage
(V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
V
GS
, Gate-to-Source
Voltage
(V)
I
D
= 6.1 A
V
DS
= 240
V
V
DS
= 150
V
10
2
Operation in this area limited
by
R
DS(on)
10
µs
16
V
DS
= 60
V
I
D
, Drain Current (A)
10
100
µs
12
8
1
T
C
= 25
°C
T
J
= 150
°C
Single Pulse
1
10
10
2
1
ms
10
ms
4
For test circuit
see figure 13
0
0
91050_06
0.1
4
8
12
16
91050_08
10
3
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source
Voltage
(V)
Fig. 8 - Maximum Safe Operating Area
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
www.vishay.com
4
Document Number: 91050
S-82998-Rev. A, 12-Jan-09
IRF737LC, SiHF737LC
Vishay Siliconix
R
D
V
DS
V
GS
7.0
6.0
R
G
D.U.T.
+
-
V
DD
I
D
, Drain Current (A)
5.0
4.0
3.0
2.0
1.0
0.0
25
50
75
100
125
150
10
V
Pulse
width
≤
1
µs
Duty factor
≤
0.1
%
Fig. 10a - Switching Time Test Circuit
V
DS
90
%
91050_09
T
C
, Case Temperature (°C)
10
%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
Single Pulse
(Thermal Response)
P
DM
t
1
t
2
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
10
-3
10
-2
0.1
1
0.1
10
-2
10
-5
91050_11
10
-4
t
1
, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
Vary
t
p
to obtain
required I
AS
R
G
V
DS
t
p
V
DD
D.U.T.
I
AS
10
V
t
p
0.01
Ω
I
AS
Fig. 12b - Unclamped Inductive Waveforms
V
DS
+
-
V
DD
V
DS
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91050
S-82998-Rev. A, 12-Jan-09
www.vishay.com
5
Microchip MCU
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