BSC123N10LSGATMA1 datasheet, PDF

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BSC123N10LSGATMA1: DescriptionMOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2; CategoryDiscrete semiconductor The transistor; File Size673KB，10 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BSC123N10LSGATMA1 Overview

MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2

BSC123N10LSGATMA1 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	SMALL OUTLINE, R-PDSO-F5
Contacts	8
Reach Compliance Code	not_compliant
ECCN code	EAR99
Factory Lead Time	26 weeks
Samacsys Description	BSC123N10LSGATMA1 N-Channel MOSFET, 71 A, 100 V OptiMOS 2, 8-Pin TDSON Infineon
Avalanche Energy Efficiency Rating (Eas)	155 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	10.6 A
Maximum drain-source on-resistance	0.0123 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-F5
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	5
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	284 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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BSC123N10LSGATMA1 Related Products

	BSC123N10LSGATMA1	BSC123N10LS G
Description	MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2	MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2
Maker	Infineon	Infineon
Configuration	SINGLE WITH BUILT-IN DIODE	Single
Maximum operating temperature	150 °C	+ 150 C

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