ZTX948STOB datasheet, PDF - EEWORLD Datasheet

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ZTX948STOB: DescriptionBipolar Transistors - BJT PNP Big Chip SELine; Categorysemiconductor Discrete semiconductor; File Size90KB，3 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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Bipolar Transistors - BJT PNP Big Chip SELine

ZTX948STOB Parametric

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	Diodes
Product Category	Bipolar Transistors - BJT
RoHS	Details
Mounting Style	Through Hole
Package / Case	TO-92-3
Transistor Polarity	PNP
Configuration	Single
Collector- Emitter Voltage VCEO Max	20 V
Collector- Base Voltage VCBO	- 40 V
Emitter- Base Voltage VEBO	- 6 V
Maximum DC Collector Current	4.5 A
Gain Bandwidth Product fT	80 MHz
Maximum Operating Temperature	+ 150 C
DC Current Gain hFE Max	100 at 10 mA at 1 V
Height	4.01 mm
Length	4.77 mm
Packaging	Bulk
Width	2.41 mm
Continuous Collector Current	- 4.5 A
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	1.2 W
Factory Pack Quantity	4000
Unit Weight	0.016000 oz

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PNP SILICON PLANAR MEDIUM POWER

HIGH CURRENT TRANSISTOR

ISSUE 2 JUNE 94

FEATURES

* 4.5 Amps continuous current

* Up to 20 Amps peak current

* Very low saturation voltage

* Excellent gain up to 20 Amps

* Very low leakage

* Exceptional gain linearity down to 10mA

* Spice model available

ZTX948

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Practical Power Dissipation*

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

totp

P

tot

T

j

:Tstg

-40

-20

-6

-20

-4.5

1.58

1.2

E-Line

TO92 Compatible

VALUE

UNIT

V

A

W

°C

-55 to +200

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated)

PARAMETER

Collector-Base Breakdown

Voltage

Collector-Emitter Breakdown

Voltag

Collector-Emitter Breakdown

Voltage

Emitter-Base Breakdown

Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter Saturation

Voltage

Base-Emitter

Saturation Voltage

SYMBOL

V

(BR)CBO

V

(BR)CER

V

(BR)CEO

V

(BR)EBO

I

CBO

I

CER

R

≤

1K

Ω

I

EBO

V

CE(sat)

-45

-90

-180

-230

-960

3-309

MIN.

-40

-20

-6

TYP.

-55

-30

-8

-50

-1

-50

-1

-10

-100

-150

-250

-310

-1100

MAX.

UNIT

V

nA

mV

CONDITIONS.

I

C

=-100

µ

A

IC=-1

µ

A, RB

≤

1K

Ω

I

C

=-10mA*

I

E

=-100

µ

A

V

CB

=-30V

V

CB

=-30V, T

amb

=100°C

V

CB

=-30V

V

CB

=-30V, T

amb

=100°C

V

EB

=-6V

I

C

=-0.5A, I

B

=-10mA*

I

C

=-2A, I

B

=-200mA*

I

C

=-4A, I

B

=-400mA*

I

C

=-5A, I

B

=-300mA*

I

C

=-5A, I

B

=-300mA*

µ

A

µ

A

V

BE(sat)

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