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BUK9K45-100E115

Description
MOSFET Dual N-channel 100 V 45 mo FET
Categorysemiconductor    Discrete semiconductor   
File Size733KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BUK9K45-100E115 Overview

MOSFET Dual N-channel 100 V 45 mo FET

BUK9K45-100E115 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseLFPAK56D-8
Number of Channels2 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current21 A
Rds On - Drain-Source Resistance38.3 mOhms
Vgs th - Gate-Source Threshold Voltage1.7 V
Vgs - Gate-Source Voltage15 V
Qg - Gate Charge33.5 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
ConfigurationDual
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
Transistor Type2 N-Channel
Fall Time27.75 ns
Pd - Power Dissipation53 W
Rise Time8.47 ns
Factory Pack Quantity1500
Typical Turn-Off Delay Time41.34 ns
Typical Turn-On Delay Time4 ns
BUK9K45-100E
26 March 2013
Dual N-channel TrenchMOS logic level FET
Product data sheet
1. General description
Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS
technology. This product has been designed and qualified to AEC Q101 standard for use
in high performance automotive applications.
2. Features and benefits
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with V
GS(th)
> 0.5 V @ 175 °C
3. Applications
12 V Automotive systems
Motors, lamps and solenoid control
Start-stop micro-hybrid applications
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 5 V; T
mb
= 25 °C;
Fig. 1
T
mb
= 25 °C;
Fig. 2
V
GS
= 5 V; I
D
= 5 A; T
j
= 25 °C;
Fig. 12
Min
-
-
-
Typ
-
-
-
Max
100
21
53
Unit
V
A
W
Static characteristics FET1 and FET2
drain-source on-state
resistance
gate-drain charge
-
38.3
45
Dynamic characteristics FET1 and FET2
Q
GD
I
D
= 5 A; V
DS
= 80 V; V
GS
= 10 V;
T
j
= 25 °C;
Fig. 15; Fig. 14
-
7.3
-
nC
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