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IRL510PBF

Description
5.6 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size229KB,7 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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IRL510PBF Overview

5.6 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

IRL510PBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)5.6 A
Maximum drain current (ID)5.6 A
Maximum drain-source on-resistance0.54 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)250
Polarity/channel typeN-CHANNEL
Maximum power consumption environment43 W
Maximum power dissipation(Abs)43 W
Maximum pulsed drain current (IDM)16 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMATTE TIN OVER NICKEL
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PD - 95406
IRL510PbF
Lead-Free
www.irf.com
1
6/17/04

IRL510PBF Related Products

IRL510PBF IRLML0030TRPBF
Description 5.6 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 5.3 A, 30 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-236AB
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon )
package instruction FLANGE MOUNT, R-PSFM-T3 HALOGEN FREE AND ROHS COMPLIANT, MICRO-3
Reach Compliance Code compliant unknown
ECCN code EAR99 EAR99
Other features LOGIC LEVEL COMPATIBLE HIGH RELIABILITY
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 100 V 30 V
Maximum drain current (Abs) (ID) 5.6 A 5.3 A
Maximum drain current (ID) 5.6 A 5.3 A
Maximum drain-source on-resistance 0.54 Ω 0.027 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB TO-236AB
JESD-30 code R-PSFM-T3 R-PDSO-G3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Celsius) 250 260
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 43 W 1.3 W
Maximum pulsed drain current (IDM) 16 A 21 A
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal surface MATTE TIN OVER NICKEL Matte Tin (Sn)
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE DUAL
Maximum time at peak reflow temperature 30 30
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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