|
IRLML0030TRPBF |
IRL510PBF |
| Description |
5.3 A, 30 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-236AB |
5.6 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| Is it lead-free? |
Lead free |
Lead free |
| Is it Rohs certified? |
conform to |
conform to |
| Maker |
International Rectifier （ Infineon ） |
International Rectifier （ Infineon ） |
| package instruction |
HALOGEN FREE AND ROHS COMPLIANT, MICRO-3 |
FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code |
unknown |
compliant |
| ECCN code |
EAR99 |
EAR99 |
| Other features |
HIGH RELIABILITY |
LOGIC LEVEL COMPATIBLE |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
SINGLE |
| Minimum drain-source breakdown voltage |
30 V |
100 V |
| Maximum drain current (Abs) (ID) |
5.3 A |
5.6 A |
| Maximum drain current (ID) |
5.3 A |
5.6 A |
| Maximum drain-source on-resistance |
0.027 Ω |
0.54 Ω |
| FET technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code |
TO-236AB |
TO-220AB |
| JESD-30 code |
R-PDSO-G3 |
R-PSFM-T3 |
| JESD-609 code |
e3 |
e3 |
| Number of components |
1 |
1 |
| Number of terminals |
3 |
3 |
| Operating mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
| Maximum operating temperature |
150 °C |
175 °C |
| Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
| Package shape |
RECTANGULAR |
RECTANGULAR |
| Package form |
SMALL OUTLINE |
FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) |
260 |
250 |
| Polarity/channel type |
N-CHANNEL |
N-CHANNEL |
| Maximum power dissipation(Abs) |
1.3 W |
43 W |
| Maximum pulsed drain current (IDM) |
21 A |
16 A |
| Certification status |
Not Qualified |
Not Qualified |
| surface mount |
YES |
NO |
| Terminal surface |
Matte Tin (Sn) |
MATTE TIN OVER NICKEL |
| Terminal form |
GULL WING |
THROUGH-HOLE |
| Terminal location |
DUAL |
SINGLE |
| Maximum time at peak reflow temperature |
30 |
30 |
| transistor applications |
SWITCHING |
SWITCHING |
| Transistor component materials |
SILICON |
SILICON |
| Base Number Matches |
1 |
1 |
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