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FSX017X

Description
GaAs FET & HEMT Chips
File Size79KB,4 Pages
ManufacturerEUDYNA
Websitehttp://www.eudyna.com/
Download Datasheet View All

FSX017X Overview

GaAs FET & HEMT Chips

FSX017X
GaAs FET & HEMT Chips
FEATURES
• Medium Power Output: P1dB=21.5dBm(Typ.)@8.0GHz
• High Power Gain: G1dB=11dB(Typ.)@8.0GHz
• Proven Reliability
Drain
DESCRIPTION
The FSX017X is a general purpose GaAs FET designed for medium
power applications up to 12GHz. These devices have a wide dynamic
range and are suitable for use in medium power, wide band, linear drive
amplifiers or oscillators.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
Ptot
Tstg
Tch
Tc = 25°C
Condition
Source
Source
Gate
Rating
12
-5
1.0
-65 to +175
175
Unit
V
V
W
°C
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain - source operating voltage (VDS) should not exceed 8 volts.
2. The forward and reverse gate currents should not exceed 0.7 and -0.1 mA respectively with
gate resistance of 2000Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Noise Figure
Associated Gain
Symbol
IDSS
gm
Vp
VGSO
NF
Gas
Test Conditions
VDS = 3V, VGS = 0V
VDS = 3V, IDS = 27mA
VDS = 3V, IDS = 2.7mA
IGS = -2.7µA
VDS = 3V, IDS = 10mA
f = 8GHz
Min.
35
-
-0.7
-5.0
-
-
Limit
Typ. Max.
55
75
50
-1.2
-
2.5
10.5
21.5
21.5
20.5
15.0
11.0
7.5
120
-
-1.7
-
-
-
-
-
-
-
-
-
150
Unit
mA
mS
V
V
dB
dB
dBm
dBm
dBm
dB
dB
dB
°C/W
Output Power at 1 dB G.C.P.
P1dB
f = 4GHz
-
VDS = 8V,
f = 8GHz 20.5
IDS = 0.7 IDSS
f = 12GHz
-
f = 4GHz
-
VDS = 8V,
f = 8GHz 10.0
IDS = 0.7 IDSS
f = 12GHz
-
Channel to Case
-
Power Gain at 1 dB G.C.P.
Thermal Resistance
G1dB
Rth
Note:
RF parameter sample size 10pcs. criteria (accept/reject)=(2/3)
The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.
G.C.P.: Gain Compression Point
Edition 1.2
July 1999
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