8550S datasheet, PDF - EEWORLD Datasheet

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8550S: DescriptionPNP TRANSISTOR; File Size23KB，1 Pages; ManufacturerSTANSON; Websitehttp://www.stansontech.com/

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8550S Overview

PNP TRANSISTOR

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PNP TRANSISTOR

-0.5A

8550S

Power Dissipation: 0.625W

Collector Current: -0.5A

Collector-Base Voltage: -45V

TO-92

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

（

Ta=25

℃）

PARAMETERS

SYMBOL MIN TYP MAX UNIT

CONDITION

Collector-Emitter Breakdown Voltage BVceo

Ic=-0.1mA

-25

Collector-Base Breakdown Voltage

BVcbo

-45

Ic=-100

Emitter-Base Breakdown Voltage

BVebo

-5

Ie=-100

Collector-Base Leakage

Icbo

-0.1

Vcb=-40V

Collector-Emitter Leakage

Iceo

-0.1

Vce=-20V

Emitter-Base Leakage

Iebo

-0.1

Veb=-5V

Collector-Emitter Saturation Voltage Vce(sat

)

-0.6

Ic=-500mA, Ib=-50mA

Base-Emiiter Saturation Voltage

Vbe(sat)

-1.2

Ic=-500mA, Ib=-50mA

DC Current Gain

Hfe1

Vce=-1V,Ic=-50mA

300

Hfe2

Vce=-1V,Ic=-500mA

Collector Current

-0.5

Peak Collector Current

Icp

-8 A(Pulse)

Current Gain Bandwidth

MHz

Vcb=-6V, Ic=-20mA

150

Output Capacitance

Cob

Vcb=-20V,Ie=0,f=1MHz

Power Dissipation

0.625

Junction Temperature

150

℃

Storage Temperature

Tstg

-55

150

℃

Hfe1 Classification

Rank

Range

85-160

120-200

160-300

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

TEL: (650) 9389294 FAX: (650) 9389295

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