ZXTN2020F
100V, SOT23, NPN medium power transistor
Summary
V
(BR)CEV
> 160V, V
(BR)CEO
> 100V
I
C(cont)
= 4A
R
CE(sat)
= 30m
P
D
= 1.2W
Complementary part number: ZXTP2029F
typical
V
CE(sat)
< 50mV @ 1A
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
Features
•
•
•
•
Higher power dissipation SOT23 package
High peak current
Low saturation voltage
160V forward blocking voltage
Applications
•
•
•
MOSFET and IGBT gate driving
Motor drive
Relay, lamp and solenoid drive
Ordering information
Device
ZXTN2020FTA
Reel size
(inches)
7
Tape width
(mm)
8
Quantity per reel
3,000
Pinout - top view
Device marking
853
Issue 4 - January 2006
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ZXTN2020F
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Peak pulse current
Continuous collector current
(a)
Base current
Power dissipation @ T
A
=25
o
C
(a)
Linear derating factor
Power dissipation @ T
A
=25
o
C
(b)
Linear derating factor
Power dissipation @ T
A
=25
o
C
(c)
Linear derating factor
Operating and storage temperature
Symbol
V
CBO
V
(BR)CEV
V
CEO
V
EBO
I
CM
I
C
I
B
P
D
P
D
P
D
T
j
:T
stg
Limit
160
160
100
7
12
4
1
1.0
8
1.2
9.6
1.56
12.5
-55 to +150
Unit
V
V
V
V
A
A
A
W
mW/
o
C
W
mW/
o
C
W
mW/
o
C
o
C
Thermal resistance
Parameter
Junction to ambient
(a)
Junction to ambient
(b)
Junction to ambient
(c)
Symbol
Rθ
JA
Rθ
JA
Rθ
JA
Value
125
104
80
Unit
o
o
o
C/W
C/W
C/W
NOTES:
(a) Mounted on 18mm x 18mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.
(b) Mounted on 30mm x 30mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.
(c) as (b) above measured at t<5secs.
Issue 4 - January 2006
© Zetex Semiconductors plc 2006
2
www.zetex.com
ZXTN2020F
Characteristics
Issue 4 - January 2006
© Zetex Semiconductors plc 2006
3
www.zetex.com
ZXTN2020F
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown
voltage
Collector-emitter cut-off
current
Collector-base cut-off
current
Emitter-base cut-off current
Static forward current
transfer ratio
Symbol
V
(BR)CBO
V
(BR)CEV
V
(BR)CEO
V
(BR)EBO
I
CEV
I
CBO
I
EBO
H
FE
100
100
35
Min.
160
160
100
7
Typ.
200
200
115
8
<1
<1
<1
220
200
60
13
Collector-emitter saturation
voltage
V
CE(sat)
20
40
85
120
Base-emitter saturation
voltage
V
BE(sat)
0.94
0.84
130
22
37
910
2%.
Max.
Unit
V
V
V
V
Conditions
I
C
=100µA
I
C
=1µA, -1V< V
BE
<+0.3V
I
C
=10mA
(a)
I
E
=100µA
V
CES
=128V,
V
BE
= -1V
V
CB
=128V
V
EB
=6V
I
C
=10mA, V
CE
=2V
(a)
I
C
=1A, V
CE
=2V
(a)
I
C
=4A, V
CE
=2V
(a)
I
C
=10A, V
CE
=2V
(a)
20
20
10
nA
nA
nA
300
30
50
105
150
1.05
0.94
mV
mV
mV
mV
V
V
MHz
pF
ns
ns
I
C
=0.1A, I
B
=5mA
(a)
I
C
=1A, I
B
=100mA
(a)
I
C
=2A, I
B
=100mA
(a)
I
C
=4A, I
B
=400mA
(a)
I
C
=4A, I
B
=400mA
(a)
I
C
=4A, V
CE
=2V
(a)
Ic=100mA, V
CE
=10V,
f=50MHz
V
CB
=10V, f=1MHz
V
CC
=10V, I
C
=1A,
I
B1
=I
B2
=100mA
Base-emitter turn-on voltage V
BE(on)
Transition frequency
Output capacitance
Turn–on time
Turn-off time
f
T
C
obo
t
(on)
t
(off)
NOTES:
(a) Measured under pulsed conditions. Pulse width=300 S. Duty cycle
Issue 4 - January 2006
© Zetex Semiconductors plc 2006
4
www.zetex.com
ZXTN2020F
Typical characteristics
Issue 4 - January 2006
© Zetex Semiconductors plc 2006
5
www.zetex.com
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