Pressure sensors
C41 series
Series/Type:
Ordering code:
Date:
Version:
Gauge pressure sensor die
2009-08-03
3
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AS SEN PD
Gauge pressure sensor die
Pressure sensors
C41 series
EPCOS AG 2015. Reproduction, publication and dissemination of this publication, enclosures hereto and the information
contained therein without EPCOS' prior express consent is prohibited.
EPCOS AG is a TDK Group Company.
Pressure sensors
C41 series
Gauge pressure sensor die
Applications
Medical devices
Automotive
Automation
Features
Piezoresistive MEMS technology
Dimensions: 5.05 × 5.05 mm
Square diaphragm
Measured media (back side):
Non-aggressive gases and fluids.
Unsuitable for substances which react with
glass or silicon.
Whetstone bridge with mV output,
ratiometric to supply voltage
Rated pressure ranges 25 up to 60 mbar
Options
Temperature sensing diode
Delivery mode
Tray
Dimensional drawings
allowable edge disruptions
100 µm max.
allowable edge disruptions
100 µm max.
electrical diagram
X1
X9
Si 100
R1 R2
glass
X5
R3 R4
checked bond pads
all dimensions in µm
Note1: geometry of diaphragm
depend on specification
X8
X2
X1 :
X2 :
X3 :
X4 :
X5 :
X8 :
X9 :
X12:
VDD+
Vout+
VDD–
VDD–
Vout+
Diode (N)
Diode (P)
Substrate
X4 X3
AS SEN PD
Please read Cautions and warnings and
Important notes at the end of this document.
Page 2 of 8
2009-08-03
Pressure sensors
C41 series
Gauge pressure sensor die
Technical data
Absolute maximum ratings
Parameter
Supply voltage
Maximum supply voltage
Temperature ranges
2)
Symbol
Conditions
Min.
Typ.
Max.
Unit
V
DD
Without damage
1)
10
V
Operating temperature range
Storage temperature range
Pressure ranges
Operating pressure ranges
Over pressure
Burst pressure
T
a
T
st
–40
–40
–40
135
140
150
°
C
°
C
°
C
For t <15 min
3)
p
r
p
ov
p
berst
Gauge pressure
Gauge pressure
Gauge pressure
4)
5)
6)
0 ... 25
5
10
0 ... 60
mbar
p
r
p
r
Electrical specifications
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Supply voltage / bridge resistance
Operating supply voltage
Total bridge resistance
Temperature coefficient
of total bridge resistance
Output signal @ V
DD
= 5 V
Offset
Sensitivity
Temperature coefficient
of the sensitivity
Pressure hysteresis
V
0
S
α
S
β
S
pHys
16)
V
DD
R
S
α
Rs
β
Rs
7)
1.0
8)
5.0
5.0
2.4
6
6.0
2.7
8
V
kΩ
10 /K
10 /K
–6
2
–3
@ 25 °
C
@ 25 °
C
4.0
2.1
4
9)
@ 25 °
C
@ 25 °
C
@ 25 °
C
10)
13)
–25
0
25
mV
mV/bar
10 /K
10 /K
% FS
–6
2
–3
See next table
–2.5
3
–0.1
–2.2
5
–1.9
8
0.1
15)
Optional temperature sensing diode
Forward diode voltage
Temperature coefficient
of forward diode voltage
V
F
TCV
F
@ 25 ° I
F
= 50 µA
C,
@ 25 ° I
F
= 50 µA
C,
17)
550
–2.4
600
–2.2
650
–2.0
mV
mV/K
18)
Long-term stability (Full scale normal output FSON = 40 mV)
Temperature hysteresis of offset
Temperature cycle drift of offset
High temperature drift of offset
Long term stability of offset
THV
0
TCDV
0
HTDV
0
LTSV
0
19)
19)
19)
19)
–1
–0.75
–0.75
–1.4
±0.6
±0.3
±0.3
±0.9
1
0.75
0.75
1.4
% FSON
% FSON
% FSON
% FSON
AS SEN PD
Please read Cautions and warnings and
Important notes at the end of this document.
Page 3 of 8
2009-08-03
Pressure sensors
C41 series
Gauge pressure sensor die
Symbols and Terms
1)
2)
3)
4)
5)
6)
7)
Maximum power supply V
DD
This is the maximal allowed voltage, which may be applied to the piezoresistive bridge circuit without damage.
Operating temperature range T
a
This is the operating Temperature range T
a,min
to T
a,max
. Because most of the sensor parameters depend on assembling
conditions like gluing, wire bonding etc, the die has to be tested over the operating temperature range by the customer
fully assembled. For design verification and process control samples, mounted in AK transducer package (AK2 series)
are tested over a reduced measuring temperature range of T
meas,min
to T
meas,max
.
Storage temperature range T
st
If the pressure sensor dies are stored in the temperature range T
st,min
to T
st,max
without applied voltage power supply, this
will not affect the performance of the pressure sensor dies.
Operating pressure range p
r
In the operating pressure range 0 to p
r,max
the pressure sensor die output characteristic is as defined in this specification.
Over pressure p
OV
Pressure cycles in the pressure range 0 to p
ov
do not affect the performance of the pressure sensor dies.
Burst pressure p
berst
Up to the burst pressure p
berst
the diaphragm of the sensor die will not be destroyed mechanically. This parameter is
tested at room temperature on samples mounted on an aluminium socket by increasing the applied pressure until the
diaphragm is destroyed.
Operating power supply V
DD
The pressure sensor parameters are defined for a power supply voltage of V
DD
= 5 V. In the operating power supply
voltage range V
DD,min
to V
DD,max
the ratiometric parameters r(V
DD
) like sensitivity, offset voltage and the temperature
coefficient of the offset voltage are defined by:
r
(
V
DD
)
=
r(5[ V ])
8)
V
DD
5[ V ]
Total bridge resistance R
S
The total bridge resistance is defined between pad X1 and X3, X4 (see the dimensional drawing in this data sheet) of the
closed piezoresistive bridge circuit. The total bridge resistance is in a good approximation the output impedance of the
piezoresistive bridge circuit. This parameter is tested completely on a wafer (wafer level test measurement).
Temperature coefficients of resistance
α
Rs
and
β
Rs
:
The temperature coefficients of resistance are tested for design verification on samples, mounted on AK transducer
package (AK2 series) over a reduced temperature range T
meas
,
min
= –20 ° to T
meas
,
max
= 80 ° with T
R
= 25 °
C
C
C.
The temperature coefficients of first and second order are defined with the polynomial:
9)
R
S
(T)
=
R
S
(T
=
25
°
C )
1
+α
Rs
T
−
25
°
C
+β
Rs
T
−
25
°
C
(
)
(
)
2
10)
11)
The coefficients
α
Rs
and
β
Rs
are calculated using the three measurement points of R
s
(T) at T
meas,min
, T
R
and T
meas,max
.
Offset voltage V
0
The offset voltage V
0
is the output voltage V
out
(p = 0 bar gauge) at zero gauge pressure and for a bridge voltage power
supply V
DD
= 5 V. This parameter is tested completely on a wafer (wafer level test measurement).
It should be noted that this parameter may be influenced by assembly.
Temperature coefficient of offset voltage TCV
0
The temperature coefficients of offset voltage are defined for a bridge voltage power supply V
DD
= 5 V.
These parameters strongly depend on assembly conditions like gluing, wire bonding etc.
The temperature coefficients of offset voltage are tested for design verification on samples, mounted on AK transducer
package (AK2 series) over a temperature range T
min
= –40 ° to T
max
= 135 °
C
C.
Therefore TCV
0+
and TCV
0-
are defined for the measurement temperature range by:
TCVo
+
=
V
o
(T
max
)
−
V
o
(25
°
C)
T
max
−
25
°
C
TCVo
−
=
V
o
(T
min
)
−
V
o
(25
°
C)
T
min
−
25
°
C
AS SEN PD
Please read Cautions and warnings and
Important notes at the end of this document.
Page 5 of 8
2009-08-03
Embedded System
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