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30A01SP

Description
Low-Frequency General-Purpose Amplifier Applications
CategoryDiscrete semiconductor    The transistor   
File Size29KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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30A01SP Overview

Low-Frequency General-Purpose Amplifier Applications

30A01SP Parametric

Parameter NameAttribute value
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.3 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.4 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)520 MHz
Base Number Matches1
Ordering number : ENN7512
30A01SP
PNP Epitaxial Planar Silicon Transistor
30A01SP
Low-Frequency
General-Purpose Amplifier Applications
Applications
Package Dimensions
unit : mm
2033A
[30A01SP]
4.0
3.0
2.2
Low-frequency power amplifier, muting circuit.
Features
0.6
0.4
15.0
1.8
Large current capacity.
Low collector-to-emitter saturation voltage (resistance).
RCE(sat) typ=0.67Ω[IC=0.3A, IB=15mA].
Small ON-resistance (Ron).
0.4
0.5
0.4
1 2
1.3
0.7
3
1.3
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
1 : Emitter
2 : Collector
3 : Base
SANYO : SPA
Ratings
--30
--30
--5
--300
--600
400
150
--55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
3.0
3.8nom
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE
Conditions
VCB=-
-30V, IE=0
VEB=-
-4V, IC=0
VCE=-
-2V, IC=--10mA
200
Ratings
min
typ
max
--0.1
--0.1
500
Unit
µA
µA
Marking : XQ
0.7
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O3003 TS IM TA-100647 No.7512-1/4

30A01SP Related Products

30A01SP ENN7512
Description Low-Frequency General-Purpose Amplifier Applications Low-Frequency General-Purpose Amplifier Applications

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