ruggedized device design, ultra low on-resistance and
cost-effectiveness.
Product Summary
BV
DSS
(V)
30
R
DS(ON)
(mΩ)
50
I
D
(A)
5
Pin Assignments
Pin Descriptions
S1
G1
S2
G2
1
2
3
4
8
7
6
5
D1
D1
D2
D2
Pin Name
Description
S1/2
G1/2
D1/2
Source
Gate
Drain
SO-8
Ordering information
A X
Feature
F :MOSFET
PN
6930N X X X
Package
S: SO-8
Lead Free
Blank : Normal
L : Lead Free Package
Packing
Blank : Tube or Bulk
A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.2 Sep 5, 2005
1/5
AF6930N
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
V
DS
V
GS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(Note 1)
Pulsed Drain Current
(Note 2)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
T
A
=25ºC
T
A
=70ºC
T
A
=25ºC
I
D
I
DM
P
D
T
STG
T
J
Rating
30
±20
5
4
20
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
W
W/ºC
ºC
ºC
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
(Note 1)
Max.
Maximum
62.5
Units
ºC/W
Electrical Characteristics
at T
J
=25ºC unless otherwise specified
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
∆BV
DSS
/
∆T
J
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Static Drain-Source
On-Resistance
(Note 3)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
(T
J
=25
o
C)
Drain-Source Leakage Current
(T
J
=70
o
C)
Gate-Source Leakage
Total Gate Charge
(Note 3)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time
(Note 3)
Rise Time
Turn-Off Delay Time
Fall-Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
=0V, I
D
=250uA
Reference to 25
o
C,
I
D
=1mA
V
GS
=10V, I
D
=5A
V
GS
=4.5V, I
D
=3.9A
V
DS
=V
GS
, I
D
=250uA
V
DS
=15V, I
D
=5A
V
DS
=30V, V
GS
=0V
V
DS
=24V, V
GS
=0V
V
GS
=±20V
I
D
=5A,
V
DS
=15V,
V
GS
=5V
V
DS
=15V,
I
D
=1.5A,
R
G
=3.3Ω, V
GS
=10V
R
D
=10Ω
V
GS
=0V,
V
DS
=25V,
f=1.0MHz
30
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.037
-
-
-
6
-
-
-
6.1
1.4
3.3
6.7
6.4
22.1
2.1
240
145
55
-
-
50
80
3
-
1
V
V/
o
C
mΩ
V
S
uA
25
±100
-
-
-
-
-
-
-
-
-
-
nA
nC
ns
pF
Source-Drain Diode
Symbol
I
S
V
SD
Parameter
Continuous Source Current
(Body Diode)
Test Conditions
Min.
Typ.
Max.
Unit
V
D
=V
G
=0V, V
S
=1.2V
T
J
=25ºC, I
S
=1.7A,
V
GS
=0V
o
-
-
-
-
1.67
1.2
V
V
Forward On Voltage
(Note 3)
2
Note 1:
Surface mounted on 1 in copper pad of FR4 board; 135 C/W when mounted on Min. copper pad.
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