Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD552
DESCRIPTION
・With
TO-3 package
・Complement
to type 2SB552
APPLICATIONS
・Power
amplifier applications
・Power
switching applications
・DC-DC
converters
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
220
180
5
15
4
150
150
-55~200
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
C
OB
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=25mA ;I
B
=0
I
C
=10A; I
B
=1A
I
C
=10A; I
B
=1A
V
CB
=220V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=5A ; V
CE
=5V
I
E
=0 ; V
CB
=10V;f=1.0MHz
I
C
=1A ; V
CE
=10V
4
25
160
MIN
180
TYP.
2SD552
MAX
UNIT
V
2.0
2.5
0.1
0.1
80
V
V
mA
mA
pF
MHz
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD552
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
JMnic
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