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2SD1151

Description
NPN EPITAXIAL PLANAR
CategoryDiscrete semiconductor    The transistor   
File Size281KB,6 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric Compare View All

2SD1151 Overview

NPN EPITAXIAL PLANAR

2SD1151 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)5 A
ConfigurationDARLINGTON
Minimum DC current gain (hFE)40
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)95 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1

2SD1151 Related Products

2SD1151 2SD1149 2SD1154
Description NPN EPITAXIAL PLANAR NPN EPITAXIAL PLANAR NPN EPITAXIAL PLANAR
Is it Rohs certified? incompatible incompatible incompatible
Reach Compliance Code unknow unknow unknow
Maximum collector current (IC) 5 A 0.02 A 7 A
Configuration DARLINGTON SINGLE Single
Minimum DC current gain (hFE) 40 400 11
JESD-609 code e0 e0 e0
Maximum operating temperature 150 °C 150 °C 140 °C
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 95 W 0.2 W 50 W
surface mount NO YES NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Base Number Matches 1 1 1

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