BSP75G
60V self-protected low-side IntelliFET
TM
MOSFET switch
Summary
Continuous drain source voltage
On-state resistance
Nominal load current
Clamping energy
V
DS
=60V
550m
1.4A (V
IN
= 5V)
550mJ
SOT223
Description
Self-protected low side MOSFET. Monolithic over temperature, over
current, over voltage (active clamp) and ESD protected logic level
power MOSFET intended as a general purpose switch.
S
D
D
IN
Features
•
•
•
•
•
•
•
•
Short circuit protection with auto restart
Over-voltage protection (active clamp)
Thermal shutdown with auto restart
Over-current protection
Input protection (ESD)
High continuous current rating
Note:
The tab is connected to the drain pin, and must
be electrically isolated from the source pin.
Connection of significant copper to the tab is
recommended for best thermal performance.
Load dump protection (actively protects load)
Logic level input
Ordering information
Device
BSP75GTA
BSP75GTC
Reel size
(inches)
7
13
Tape width
(mm)
12mm embossed
12mm embossed
Quantity per reel
1,000
4,000
Device marking
BSP75G
Issue 4 - May 2006
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BSP75G
Functional block diagram
D
Over voltage
protection
IN
Over current
protection
Logic
Over temperature
protection
dV/dt
limitation
Human body
ESD protection
S
Applications
•
•
•
•
•
•
Especially suited for loads with a high in-rush current such as lamps and motors.
All types of resistive, inductive and capacitive loads in switching applications.
C compatible power switch for 12V and 24V DC applications.
Automotive rated.
Replaces electromechanical relays and discrete circuits.
Linear mode capability - the current-limiting protection circuitry is designed to de-activate at
low Vds, in order not to compromise the load current during normal operation. The design
maximum DC operating current is therefore determined by the thermal capability of the
package/board combination, rather than by the protection circuitry.
Issue 4 - May 2006
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BSP75G
Absolute maximum ratings
Parameter
Continuous drain-source voltage
Drain-source voltage for short circuit protection
Continuous input voltage
Peak input voltage
Operating temperature range
Storage temperature range
Power dissipation at T
A
=25°C
(a)
Continuous drain current @ V
IN
=10V; T
A
=25°C
(a)
Continuous drain current @ V
IN
=5V; T
A
=25°C
(a)
Pulsed drain current @ V
IN
=10V
Continuous source current (body diode)
(a)
Pulsed source current (body diode)
Unclamped single pulse inductive energy
Load dump protection
Electrostatic discharge (human body model)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
V
DS
V
DS(SC)
V
IN
V
IN
T
j
,
T
stg
P
D
I
D
I
D
I
DM
I
S
I
S
E
AS
V
LoadDump
V
ESD
Limit
60
36
-0.2 ... +10
-0.2 ... +20
-40 to +150
-55 to +150
2.5
1.6
1.4
5
3
5
550
80
4000
E
40/150/56
Unit
V
V
V
V
°C
°C
W
A
A
A
A
A
mJ
V
V
Thermal resistance
Parameter
Junction to ambient
(a)
Junction to ambient
(b)
Junction to ambient
(c)
Symbol
R
JA
R
JA
R
JA
Limit
50
24
208
Unit
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 37mm x 37mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight
copper.
(b) For a device surface mounted on FR4 board and measured at t<=10s.
(c) For a device mounted on FR4 board with the minimum copper required for electrical connections.
Issue 4 - May 2006
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BSP75G
Characteristics
Issue 4 - May 2006
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BSP75G
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Static characteristics
Drain-source clamp voltage
Off-state drain current
Off-state drain current
Input threshold voltage
(*)
Input current
Input current
Input current
Static drain-source on-state
resistance
Static drain-source on-state
resistance
Current limit
(†)
Current limit
(†)
Dynamic characteristics
Turn-on time (V
IN
to 90% I
D
)
Turn-off time (V
IN
to 90% I
D
)
Slew rate on (70 to 50% V
DD
)
Slew rate off (50 to 70% V
DD
)
Protection functions
(‡)
Required input voltage for
over temperature protection
Thermal overload trip
temperature
Thermal hysteresis
Unclamped single pulse
inductive energy Tj=25°C
Unclamped single pulse
inductive energy Tj=150°C
Inverse diode
Source drain voltage
Symbol
V
DS(AZ)
I
DSS
I
DSS
V
IN(th)
I
IN
I
IN
I
IN
R
DS(on)
R
DS(on)
I
D(LIM)
I
D(LIM)
t
on
t
off
-dV
DS
/dt
on
Min.
60
Typ.
70
0.1
3
Max.
75
3
15
Unit
V
A
A
V
Conditions
I
D
=10mA
V
DS
=12V, V
IN
=0V
V
DS
=32V, V
IN
=0V
V
DS
=V
GS
, I
D
=1mA
V
IN
=+5V
V
IN
=+7V
V
IN
=+10V
V
IN
=+5V, I
D
=0.7A
V
IN
=+10V, I
D
=0.7A
V
IN
=+5V, V
DS
>5V
V
IN
=+10V, V
DS
>5V
R
L
=22 , V
DD
=12V,
V
IN
=0 to +10V
R
L
=22 , V
DD
=12V,
V
IN
=+10V to 0V
R
L
=22 , V
DD
=12V,
V
IN
=0 to +10V
R
L
=22 , V
DD
=12V,
V
IN
=+10V to 0V
1
2.1
0.7
1.5
4
520
385
1.2
2.7
7
675
550
1.75
4
10
20
20
10
mA
mA
mA
m
m
A
A
s
s
V/ s
V/ s
0.7
2
1.1
3
2.2
13
10
3.2
dV
DS
/dt
off
V
PROT
T
JT
4.5
150
175
10
V
°C
°C
mJ
mJ
I
D(ISO)
=0.7A, V
DD
=32V
I
D(ISO)
=0.7A, V
DD
=32V
E
AS
E
AS
550
200
V
SD
1
V
IN
=0V, -I
D
=1.4A
NOTES:
(*) Protection features may operate outside spec for V
IN
<4.5V.
(†) The drain current is limited to a reduced value when V
DS
exceeds a safe level.
(‡) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed
for continuous, repetitive operation.
Issue 4 - May 2006
© Zetex Semiconductors plc 2006
5
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