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AP03N70I-H

Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size42KB,4 Pages
ManufacturerAPEC
Download Datasheet Parametric View All

AP03N70I-H Overview

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP03N70I-H Parametric

Parameter NameAttribute value
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompli
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)32 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage700 V
Maximum drain current (ID)2.5 A
Maximum drain-source on-resistance4.4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)8 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
AP03N70I-H
Pb Free Plating Product
Advanced Power
Electronics Corp.
Repetitive Avalanche Rated
Fast Switching Speed
Simple Drive Requirement
RoHS Compliant
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
700V
4.4Ω
2.5A
G
S
Description
AP03N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.
TO-220CFM type provide high blocking voltage to overcome voltage surge
and sag in the toughest power system with the best combination of fast
G
D
switching,ruggedized design and cost-effectiveness.
S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
I
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
2
Rating
700
±30
2.5
1.6
8
29
0.23
32
2.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
A
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
4.3
65
Units
℃/W
℃/W
Data & specifications subject to change without notice
200417062-1/4
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