AP07N70CF-A
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼
Dynamic dv/dt Rating
▼
Repetitive Avalanche Rated
▼
Fast Switching
▼
Simple Drive Requirement
▼
RoHS Compliant
G
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
650V
1.2Ω
7A
Description
AP07N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications. TO-220FM
type provide high blocking voltage to overcome voltage surge and sag in
the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
The TO-220FM package is universally preferred for all commercial-
industrial applications. The device is suited for switch mode power
supplies ,DC-AC converters and high current high speed switching
G
D
S
TO-220FM
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
I
AR
E
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Rating
650
±30
7
4.4
18
37
0.3
2
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
℃
℃
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
140
7
7
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
3.4
65
Units
℃/W
℃/W
200705052-1/6
Data & specifications subject to change without notice
AP07N70CF-A
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=1mA
Min.
650
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.6
-
-
4.5
-
-
-
32
8.6
9
17
15
35
18
2075
120
8
Max. Units
-
-
1.2
4
-
10
100
±100
-
-
-
-
-
-
-
-
-
-
V
V/℃
Ω
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25 C)
Drain-Source Leakage Current (T
j
=150
o
C)
o
V
GS
=10V, I
D
=3.5A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=3.5A
V
DS
=600V, V
GS
=0V
V
DS
=480V
,
V
GS
=0V
V
GS
=±30V
I
D
=7A
V
DS
=480V
V
GS
=10V
V
DD
=300V
I
D
=7A
R
G
=10Ω,V
GS
=10V
R
D
=43Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
3
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
Notes:
1.Pulse width limited by safe operating area.
2.Starting T
j
=25
o
C , V
DD
=50V , L=5mH , R
G
=25Ω , I
AS
=7A.
3.Pulse width <300us , duty cycle <2%.
Parameter
Pulsed Source Current ( Body Diode )
Forward On Voltage
3
1
Test Conditions
Min.
-
-
-
Typ.
-
-
-
Max. Units
7
18
1.5
A
A
V
Continuous Source Current ( Body Diode )
V
D
=V
G
=0V , V
S
=1.5V
T
j
=25℃, I
S
=7A, V
GS
=0V
2/4
AP07N70CF-A
12
9
T
C
=25 C
I
D
, Drain Current (A)
8
o
10V
6.0V
5.5V
I
D
, Drain Current (A)
6
T
C
=150
o
C
10V
6.0V
5.5V
5.0V
5.0V
4
3
V
G
=4.0V
V
G
=4.0V
0
0
5
10
15
20
25
0
0
10
20
30
40
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
3
I
D
=3.5A
V
G
=10V
1.1
Normalized BV
DSS
(V)
Normalized R
DS(ON)
2
1
1
0.9
0.8
0
-50
0
50
100
150
-50
0
50
100
150
T
j
, Junction Temperature ( C)
o
T
j
, Junction Temperature ( C)
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
100
5
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
4
1
V
GS(th)
(V)
1.3
T
j
= 150
o
C
I
S
(A)
T
j
= 25
o
C
3
0.1
2
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP07N70CF-A
16
10000
f=1.0MHz
I
D
=7A
V
GS
, Gate to Source Voltage (V)
12
C
iss
V
DS
=320V
V
DS
=400V
V
DS
=480V
C (pF)
8
100
C
oss
4
C
rss
0
0
10
20
30
40
50
1
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
0.2
10
10us
I
D
(A)
0.1
0.1
0.05
100us
1
P
DM
0.02
1ms
T
c
=25
o
C
Single Pluse
0
1
10
100
1000
t
T
0.01
10ms
100ms
10000
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
京公网安备 11010802033920号
EEWORLD
