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2SK2408-E

Description
Silicon N Channel MOS FET
CategoryDiscrete semiconductor    The transistor   
File Size75KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

2SK2408-E Overview

Silicon N Channel MOS FET

2SK2408-E Parametric

Parameter NameAttribute value
Brand NameRenesas
Is it Rohs certified?conform to
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts4
Manufacturer packaging codePRSS0004AC-A4
Reach Compliance Codecompli
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (Abs) (ID)7 A
Maximum drain current (ID)7 A
Maximum drain-source on-resistance0.9 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee2
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)60 W
Maximum pulsed drain current (IDM)28 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN COPPER
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
2SK1669
Silicon N Channel MOS FET
REJ03G0966-0200
(Previous: ADE-208-1310)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
Built-in fast recovery diode (t
rr
= 90 ns)
Suitable for motor control, switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
D
G
1. Gate
2. Drain
(Flange)
3. Source
S
3
1
2
Rev.2.00 Sep 07, 2005 page 1 of 6

2SK2408-E Related Products

2SK2408-E 2SK1669 2SK2408 2SK1669-E
Description Silicon N Channel MOS FET Silicon N Channel MOS FET Silicon N Channel MOS FET Silicon N Channel MOS FET
Is it Rohs certified? conform to incompatible incompatible conform to
Parts packaging code TO-220AB TO-3P TO-220AB TO-3P
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 4 3 3 4
Reach Compliance Code compli compli compli compli
Shell connection DRAIN DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 500 V 250 V 500 V 250 V
Maximum drain current (Abs) (ID) 7 A 30 A 7 A 30 A
Maximum drain current (ID) 7 A 30 A 7 A 30 A
Maximum drain-source on-resistance 0.9 Ω 0.095 Ω 0.9 Ω 0.095 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
JESD-609 code e2 e0 e0 e2
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 60 W 125 W 60 W 125 W
Maximum pulsed drain current (IDM) 28 A 120 A 28 A 120 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal surface TIN COPPER TIN LEAD TIN LEAD TIN COPPER
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Base Number Matches 1 1 1 1
Is it lead-free? - Contains lead Contains lead Lead free
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