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AP9620M

Description
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size79KB,6 Pages
ManufacturerAPEC
Download Datasheet View All

AP9620M Overview

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9620M
Advanced Power
Electronics Corp.
Low On Resistance
Capable
of 2.5V Drive
C
Fast Switching
Simple Drive Requirement
SO-8
S
D
D
D
D
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
G
S
S
-20V
20mΩ
-9.5A
I
D
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
D
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
-20
±8
-9.5
-7.6
-76
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
3
Value
Max.
50
Unit
℃/W
Data and specifications subject to change without notice
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