is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
®
also achieves faster switching speeds through optimized gate layout.
T-MAX™
1200V 20A 0.600
Ω
TO-264
• Faster Switching
• Lower Leakage
• Avalanche Energy Rated
FREDFET
D
G
S
• Popular
T-MAX™
or TO-264
Package
MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
1
All Ratings: T
C
= 25°C unless otherwise specified.
APT12060B2VFR_LVFR
UNIT
Volts
Amps
1200
20
80
±30
±40
625
5.00
-55 to 150
300
20
50
4
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
Volts
Watts
W/°C
°C
Amps
mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250µA)
Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT
Volts
1200
0.600
250
1000
(V
GS
= 10V, I
D
= 10A)
Ohms
µA
nA
Volts
Zero Gate Voltage Drain Current (V
DS
= 1200, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 960V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1mA)
2
4
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
050-5845 Rev A
4-2004
±100
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
APT12060B2VFR _ LVFR
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
R
G
= 0.6Ω
MIN
TYP
MAX
UNIT
pF
7545
650
350
431
34
210
13
12
63
12
9500
980
490
650
41
320
26
24
95
25
ns
nC
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
S
I
SM
V
SD
dv
/
dt
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
1
2
MIN
TYP
MAX
UNIT
Amps
Volts
V/ns
ns
µC
Amps
20
80
1.3
18
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
(Body Diode)
(V
GS
= 0V, I
S
= -I
D
[Cont.])
dt
5
dv
/
t
rr
Q
rr
I
RRM
Reverse Recovery Time
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/µs)
Reverse Recovery Charge
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/µs)
Peak Recovery Current
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/µs)
320
650
3
9
15
25
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θJA
Characteristic
Junction to Case
Junction to Ambient
3
See MIL-STD-750 Method 3471
4
Starting T = +25°C, L = 15mH, R
j
G
MIN
TYP
MAX
UNIT
°C/W
0.20
40
= 25Ω, Peak I
L
= 20A
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
5
I
≤
I [Cont.],
di
/
= 100A/µs, T
≤
150°C, R = 2.0Ω V = 200V.
S
D
j
G
R
dt
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.2
Z
JC
, THERMAL IMPEDANCE (°C/W)
θ
0.1
0.05
D=0.5
0.2
0.1
0.01
0.005
0.05
0.02
0.01
SINGLE PULSE
Note:
PDM
t1
t2
Peak TJ = PDM x Z
θJC
+ TC
Duty Factor D = t1/t2
050-5845 Rev A
4-2004
0.001
10
-5
10
-3
10
-2
10
-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
-4
Typical Performance Curves
I
D
, DRAIN CURRENT (AMPERES)
30
25
20
15
10
5
0
VGS =15 &10V
APT12060B2VFR_LVFR
5V
4.5V
Graph Deleted
4V
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS
60
I
D
, DRAIN CURRENT (AMPERES)
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
0
5
10
15
20
25
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.2
V
GS
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
50
40
30
20
10
0
1.15
1.10
1.05
1.0
0.95
0.9
VGS=20V
VGS=10V
TJ = +125°C
TJ = +25°C
TJ = -55°C
0
1
2
3
4
5
6
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
0
20
18
I
D
, DRAIN CURRENT (AMPERES)
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
1.2
1.15
1.10
1.05
1.00
0.95
0.90
5
10 15 20
25 30 35 40
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
16
14
12
10
8
6
4
2
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
-25
0
25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
V
GS
(TH), THRESHOLD VOLTAGE
(NORMALIZED)
-50
3.0
2.5
2.0
1.5
1.0
0.5
I = 0.5 I [Cont.]
D
D
V
GS
= 10V
1.1
1.0
0.9
0.8
0.7
0.6
0.0
-50
-25
0
25 50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25
0
25 50 75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-50
050-5845 Rev A
4-2004
80
I
D
, DRAIN CURRENT (AMPERES)
50
OPERATION HERE
LIMITED BY RDS (ON)
40,000
100µS
C, CAPACITANCE (pF)
APT12060B2VFR_LVFR
10,000
5,000
Ciss
10
5
1mS
1,000
500
Coss
1
5 10
50 100
500 1200
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
TC =+25°C
TJ =+150°C
SINGLE PULSE
10mS
Crss
.01
.1
1
10
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
100
12
10
8
6
4
2
0
I = I [Cont.]
D
D
200
100
50
TJ =+150°C
TJ =+25°C
10
5
VDS=100V
VDS=250V
VDS=400V
100
200
300
400
500
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
0
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
1
T-MAX
TM
(B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.79 (.228)
6.20 (.244)
Drain
20.80 (.819)
21.46 (.845)
Drain
25.48 (1.003)
26.49 (1.043)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
2.29 (.090)
2.69 (.106)
4-2004
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
Gate
Drain
Source
050-5845 Rev A
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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