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3005

Description
FEMALE, RIGHT ANGLE TELECOM AND DATACOM CONNECTOR, SOLDER
Categorysemiconductor    Other integrated circuit (IC)   
File Size329KB,3 Pages
ManufacturerGHz Technology ( Microsemi )
Websitehttp://www.advancedpower.com/
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3005 Overview

FEMALE, RIGHT ANGLE TELECOM AND DATACOM CONNECTOR, SOLDER

3005
5 Watts - 28 Volts, Class C
Microwave 3000 MHz
GENERAL DESCRIPTION
The 3005 is a COMMON BASE transistor capable of providing 5 Watts Class
C, RF output power at 3000 MHz. Gold metalization and diffused ballasting
are used to provide high reliability and supreme ruggedness. The transistor
uses a fully hermetic High Temperature Solder Sealed package.
CASE OUTLINE
55BT, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
25 Watts
50 Volts
3.5 Volts
2.5 A
- 65 to + 200
o
C
+ 200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
Pout
Pin
Pg
CHARACTERISTICS
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
TEST CONDITIONS
F = 3000 MHz
Vcb = 28 Volts
Po = 5 Watts
As Above
F = 3 GHz, Po = 5 W
MIN
5.0
1.5
5.2
30
20:1
TYP
MAX
UNITS
Watt
Watt
dB
%
η
c
VSWR
1
BVces
BVebo
h
FE
Cob
θ
jc
Collector to Emitter Breakdown
Emitter to Base Breakdown
Current Gain
Output Capacitance
Thermal Resistance
Ic = 10 mA
Ie = 10 mA
Vce = 5 V, Ic = 300 mA
F = 1 MHz, Vcb = 28 V
50
3.5
20
Volts
Volts
120
7.0
o
pF
C/W
Issue August 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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