AO3700
N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO3700 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for DC-DC conversion applications.
Standard Product AO3700 is Pb-free (meets ROHS & Sony
259 specifications). AO3700L is a Green Product ordering
option. AO3700 and AO3700L are electrically identical.
Features
V
DS
(V) = 30V
I
D
= 3.3A (V
GS
= 10V)
R
DS(ON)
< 65mΩ (V
GS
= 10V)
R
DS(ON)
< 75mΩ (V
GS
= 4.5V)
R
DS(ON)
< 160mΩ (V
GS
= 2.5V)
SCHOTTKY
V
DS
(V) = 20V, I
F
= 1A, V
F
<0.5V@0.5A
SOT-23-5
Top View
G
S
A
1
2
3
5
4
D
K
G
D
K
S
A
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
T
A
=25°C
I
D
A
Continuous Drain Current
T
A
=70°C
I
DM
Pulsed Drain Current
B
V
KA
Schottky reverse voltage
T
A
=25°C
I
F
A
Continuous Forward Current
T
A
=70°C
I
FM
Pulsed Forward Current
B
Power Dissipation
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
t
≤
10s
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
MOSFET
30
±12
3.3
2.6
10
Schottky
Units
V
V
A
T
A
=25°C
T
A
=70°C
P
D
T
J
, T
STG
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
1.15
0.7
-55 to 150
Typ
80.3
117
43
109.4
136.5
58.5
20
2
1
10
0.92
0.59
-55 to 150
Max
110
150
80
135
175
80
V
A
W
°C
Units
°C/W
Steady-State
Steady-State
t
≤
10s
Steady-State
Steady-State
°C/W
Alpha & Omega Semiconductor, Ltd.
AO3700
Electrical Characteristics (T =25°C unless otherwise noted)
J
Parameter
Symbol
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=24V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±12V
V
DS
=V
GS
I
D
=250µA
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=3.3A
T
J
=125°C
1
10
1.4
51
64
60
100
11.7
0.81
Min
30
1
5
100
2
65
90
75
160
1
2.5
270
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
V
mA
pF
10
ns
nC
g
FS
V
SD
I
S
V
GS
=4.5V, I
D
=3.0A
V
GS
=2.5V, I
D
=1A
Forward Transconductance
V
DS
=5V, I
D
=3.3A
Diode Forward Voltage
I
S
=1A,V
GS
=0V
Maximum Body-Diode Continuous Current
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
g
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
Gate Drain Charge
t
D(on)
Turn-On DelayTime
t
r
Turn-On Rise Time
t
D(off)
Turn-Off DelayTime
t
f
Turn-Off Fall Time
t
rr
Body Diode Reverse Recovery Time
Q
rr
Body Diode Reverse Recovery Charge
SCHOTTKY PARAMETERS
V
F
Forward Voltage Drop
I
rm
C
T
t
rr
Q
rr
Maximum reverse leakage current
Junction Capacitance
Schottky Reverse Recovery Time
Schottky Reverse Recovery Charge
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
226
39
29
1.4
4.6
1.4
0.55
2.6
3.2
14.5
2.1
10.2
3.8
0.39
2.5
5.5
V
GS
=4.5V, V
DS
=15V, I
D
=3.3A
V
GS
=10V, V
DS
=15V, R
L
=4.7Ω,
R
GEN
=6Ω
I
F
=3.3A, dI/dt=100A/µs
I
F
=3.3A, dI/dt=100A/µs
I
F
=0.5A
V
R
=16V
V
R
=16V, T
J
=125°C
V
R
=10V
I
F
=1A, dI/dt=100A/µs
I
F
=1A, dI/dt=100A/µs
13
0.5
0.1
20
34
5.2
0.8
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
µs
pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
SOA curve provides a single pulse rating. Rev0: October 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2
Alpha & Omega Semiconductor, Ltd.
AO3700
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10V
12
3.5V
4V
6V
9
I
D
(A)
3V
6
I
D
(A)
10
8
V
DS
=5V
6
V
GS
=2.5V
3
4
125°C
2
51
60
100
25°C
0
0
2
3
4
V
DS
(Volts)
Fig 1: On-Region Characteristics
1
5
0
0
0.5
1.5
2
2.5
3
V
GS
(Volts)
Figure 2: Transfer Characteristics
1
3.5
200
175
150
R
DS(ON)
(m
Ω
)
125
100
75
50
25
0
0
2
4
6
8
10
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
100
90
125°
80
R
DS(ON)
(m
Ω
)
70
25°C
60
50
40
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
I
D
=3.3A
V
GS
=10V
V
GS
=4.5V
V
GS
=2.5V
1.8
V
GS
=4.5V
Normalized On-Resistance
1.6
1.4
1.2
1
I
D
=3.0A
270
1.7
V
GS
=10V
3.6
I
D
=3.3A
V
GS
=2.5V
I
D
=1A
0.8
0
25
50
75
100
125
13
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
1.0E+00
1.0E-01
I
S
(A)
125°C
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
25°C
Alpha & Omega Semiconductor, Ltd.
AO3700
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
V
DS
=15V
I
D
=3.3A
4
Capacitance (pF)
400
350
300
250
200
150
100
50
0
0
2
Q (nC)
3
4
g
Figure 7: Gate-Charge Characteristics
1
5
0
0
10
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
30
C
rss
C
iss
V
GS
(Volts)
3
2
51
60
100
C
oss
1
100.0
T
J(Max)
=150°C
T
A
=25°C
10.0
I
D
(Amps)
1ms
1.0
1s
10s
DC
0.1
0.1
1
10
100
V (Volts)
Figure 9: Maximum
DS
Forward Biased Safe
Operating Area (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
10ms
0.1s
100µs
R
DS(ON)
limited
10µs
270
20
T
J(Max)
=150°C
T
A
=25°C
1.7
3.6
15
Power (W)
10
5
0
0.001
13
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=110°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
P
D
T
on
Single Pulse
0.1
T
0.01
0.00001
0.0001
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
0.001
0.01
100
1000
Alpha & Omega Semiconductor, Ltd.
AO3700
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
10
125°C
Capacitance (pF)
1
I
F
(Amps)
80
60
40
20
25°C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
F
(Volts)
Figure 12: Schottky Forward Characteristics
0
0
5
10
15
20
V
KA
(Volts)
Figure 13: Schottky Capacitance Characteristics
100
f = 1MHz
0.1
0.01
0.5
1.0E-02
0.4
V
F
(Volts)
I
F
=0.5A
0.3
Leakage Current (A)
1.0E-03
1.0E-04
V
R
=16V
0.2
1.0E-05
0.1
0
25
50
75
100
Temperature (°C)
125
150
1.0E-06
0
25
50
75
100
125
150
Temperature (°C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
Figure 14: Schottky Forward Drop vs.
Junction Temperature
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=135°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Schottky Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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