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DKV6533C

Description
SILICON HYPERABRUPT VARACTOR DIODE
File Size21KB,1 Pages
ManufacturerASI [ASI Semiconductor, Inc]
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DKV6533C Overview

SILICON HYPERABRUPT VARACTOR DIODE

DKV6533C
SILICON HYPERABRUPT VARACTOR DIODE
DESCRIPTION:
The
DKV6533C
is designed for UHF
Filter and Oscillator Applications that
Require Octave tuning.
PACKAGE STYLE DO-7
1.000” min.
2 places
.018”
.022”
FEATURES:
T
R
= 4.6 Min. at V
R
= 3 /20 V
Q
= 450 Min. at 3 V /50 MHz
Hermetic
DO-7
Package
.230”
.300”
.085”
.107”
MAXIMUM RATINGS
I
F
V
R
P
DISS
T
J
T
STG
50 mA
22 V
250 mW @ T
C
= 25
O
C
-55
O
C to + 125
O
C
-55
O
C to +175
O
C
FINISHES
Body :
Blue
Cathode Band :
Black
Leads :
Tin plated
NONE
CHARACTERISTICS
SYMBOL
V
BR
I
R
I
R
= 10
µA
V
R
= 20 V
V
R
= 3.0 V
V
R
= 8.0 V
V
R
= 20 V
T
C
= 25 C
O
TEST CONDITIONS
MINIMUM
22
TYPICAL
MAXIMUM
100
UNITS
V
nA
f = 1.0 MHz
C
T
T
R
Q
10.5
4.3
2.0
4.6
450
12.5
5.7
2.3
6.3
pF
V
R
= 3 & 20 V
V
R
= 3.0 V
f = 1.0 MHz
f = 50 MHz
---
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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