Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switch-
ing applications, circuit protection, and voltage clamping. Extremely
low forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage — 0.35 Volts (Typ) @ I
F
= 10 mAdc
BAT54RALT1
30 VOLTS
SCHOTTKY BARRIER
DETECTOR AND
SWITCHING
DIODES
3
3
ANODE
1
CATHODE
2
CATHODE
1
2
CASE 318–08, STYLE 12
SOT–23 (TO–236AB)
DEVICE MARKING
BAT54ALT1 = B6
MAXIMUM RATINGS
(T
J
= 125°C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
Operating Junction
Temperature Range
Storage Temperature Range
Symbol
V
R
P
F
225
1.8
T
J
T
stg
Max
30
Unit
Volts
mW
mW/°C
°C
°C
–55 to +150
–55 to +150
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Reverse Breakdown Voltage (I
R
= 10
µA)
Total Capacitance (V
R
= 1.0 V, f = 1.0 MHz)
Reverse Leakage (V
R
= 25 V)
Forward Voltage (I
F
= 0.1 mAdc)
Forward Voltage (I
F
= 30 mAdc)
Forward Voltage (I
F
= 100 mAdc)
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc) Figure 1
Forward Voltage (I
F
= 1.0 mAdc)
Forward Voltage (I
F
= 10 mAdc)
Symbol
V
(BR)R
C
T
I
R
V
F
V
F
V
F
t
rr
V
F
V
F
Min
30
—
—
—
—
—
—
—
—
Typ
—
7.6
0.5
0.22
0.41
0.52
—
0.29
0.35
Max
—
10
2.0
0.24
0.5
1.0
5.0
0.32
0.40
Unit
Volts
pF
µAdc
Vdc
Vdc
Vdc
ns
Vdc
Vdc
G10–1/2
BAT54RALT1
+10 V
820
Ω
2.0 k
0.1µF
t
r
t
p
10%
t
I
F
t
rr
t
100
µH
I
F
0.1
µF
50
Ω
OUTPUT
PULSE
GENERATOR
D.U.T.
50
Ω
INPUT
SAMPLING
OSCILLOSCOPE
90%
V
R
INPUT SIGNAL
I
R
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I
F
) of 10mA.
Notes:
2. Input pulse is adjusted so I
R(peak)
is equal to 10mA.
Notes:
3. t
p
» t
rr
Figure 1. Recovery Time Equivalent Test Circuit
100
1000
T
A
= 150°C
I
R
, REVERSE CURRENT (µA)
I
F
, FORWARD CURRENT (mA)
100
10
150°C
T
A
= 125°C
10
1.0
125°C
1.0
T
A
= 85°C
0.1
85°C
25°C
– 40°C
–55°C
0.01
T
A
= 25°C
0.001
0
5
10
15
20
25
30
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
V
F
, FORWARD VOLTAGE (VOLTS)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 2. Forward Voltage
Figure 3. Leakage Current
14
12
C
T
TOTAL CAPACITANCE (pF)
10
8
6
4
2
0
0
5
10
15
20
25
30
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Total Capacitance
G10–2/2
Embedded System
京公网安备 11010802033920号
EEWORLD
