APM4548K
Dual Enhancement Mode MOSFET (N-and P-Channel)
Features
•
N-Channel
30V/7A,
R
DS(ON)
= 18mΩ (typ.) @ V
GS
= 10V
R
DS(ON)
= 23mΩ (typ.) @ V
GS
= 4.5V
Pin Description
•
P-Channel
-30V/-6A,
R
DS(ON)
= 32mΩ (typ.) @ V
GS
=-10V
R
DS(ON)
= 42mΩ (typ.) @ V
GS
=-4.5V
Top View of SOP
−
8
(8)
D1
(7)
D1
•
•
•
(3)
S2
Super High Dense Cell Design
Reliable and Rugged
Lead Free Available (RoHS Compliant)
(2)
G1
(4)
G2
Applications
•
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
S1
(1)
D2
(5)
D2
(6)
N-Channel MOSFET P-Channel MOSFET
Ordering and Marking Information
APM4548
Lead Free Code
Handling Code
Temp. Range
Package Code
Package Code
K : SOP-8
Operating Junction Temp. Range
C : -55 to 150
°
C
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
XXXXX - Date Code
APM4548 K :
APM4548
XXXXX
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering
operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C
for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
©
ANPEC Electronics Corp.
Rev. B.1 - Sep., 2005
1
www.anpec.com.tw
APM4548K
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
*
I
DM
*
I
S
*
T
J
T
STG
P
D
*
R
θ
JA
*
Note:
*Surface Mounted on 1in
pad area, t
≤
10sec.
2
(T
A
= 25°C unless otherwise noted)
N Channel
30
±20
V
GS
=10V (N)
V
GS
=-10V (P)
7
30
1.2
150
-55 to 150
T
A
=25°C
T
A
=100°C
2
0.8
62.5
W
°C/W
P Channel
-30
±20
-6
-20
-1
A
°C
V
A
Unit
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
Power Dissipation
Thermal Resistance-Junction to Ambient
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
APM4548K
Min.
Typ.
Max.
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
=0V, I
DS
=250µA
V
GS
=0V, I
DS
=-250µA
V
DS
=24V, V
GS
=0V
I
DSS
Zero Gate Voltage Drain
Current
T
J
=85°C
V
DS
=-24V, V
GS
=0V
T
J
=85°C
V
GS(th)
Gate Threshold Voltage
I
GSS
Gate Leakage Current
V
DS
=V
GS
, I
DS
=250µA
V
DS
=V
GS
, I
DS
=-250µA
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
DS
=7A
R
DS(ON) a
Drain-Source On-State
Resistance
V
GS
=-10V, I
DS
=-6A
V
GS
=4.5V, I
DS
=5A
V
GS
=-4.5V, I
DS
=-5A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
18
32
23
42
1
-1
1.5
-1.5
30
-30
1
30
-1
-30
2
-2
±100
±100
24
42
30
55
mΩ
nA
V
µA
V
Copyright
©
ANPEC Electronics Corp.
Rev. B.1 - Sep., 2005
2
www.anpec.com.tw
APM4548K
Electrical Characteristics (Cont.)
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
APM4548K
Min.
Typ.
Max.
Unit
Diode Characteristics
V
SD a
Diode Forward Voltage
I
SD
=2A, V
GS
=0V
I
SD
=-2.3A, V
GS
=0V
N-Ch
P-Ch
0.8
-0.8
1.3
-1.3
V
Dynamic Characteristics
b
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
V
GS
=0V,V
DS
=0V,F=1MHz
N-Channel
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
P-Channel
V
GS
=0V,
V
DS
=-15V,
Frequency=1.0MHz
N-Channel
V
DD
=15V, R
L
=15Ω,
I
DS
=1A, V
GEN
=10V,
R
G
=6Ω
P-Channel
V
DD
=-15V, R
L
=15Ω,
I
DS
=-1A, V
GEN
=-10V,
R
G
=6Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
2.5
11
960
980
180
155
100
120
7
7
9
10
34
38
12
14
5
nC
3
14
14
17
20
62
70
23
26
ns
pF
Ω
Turn-off Fall Time
Q
rr
N-Channel
I =7A, dI
SD
/dt =100A/µs
Reverse Recovery Charge
SD
P-Channel
I
SD
=-6A, dI
SD
/dt =100A/µs
Gate Charge Characteristics
b
Q
g
Q
gs
Q
gd
Notes:
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
N-Channel
V
DS
=15V, V
GS
=10V,
I
DS
=7A
P-Channel
V
DS
=-15V, V
GS
=-10V,
I
DS
=-6A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
19
24
2
2
3.6
3.7
25
30
nC
Copyright
©
ANPEC Electronics Corp.
Rev. B.1 - Sep., 2005
3
www.anpec.com.tw
APM4548K
Typical Characteristics
N-Channel
Power Dissipation
2.5
Drain Current
8
7
2.0
I
D
- Drain Current (A)
6
5
4
3
2
P
tot
- Power (W)
1.5
1.0
0.5
1
0.0
T
A
=25 C
0
20
40
60
80 100 120 140 160
o
0
T
A
=25 C,V
G
=10V
0
20
40
60
80 100 120 140 160
o
T
j
- Junction Temperature (°C)
T
j
- Junction Temperature (°C)
Safe Operation Area
Normalized Transient Thermal Resistance
100
2
1
Thermal Transient Impedance
Duty = 0.5
0.2
I
D
- Drain Current (A)
10
Rd
s(o
n)
Lim
it
1ms
0.1
0.1
0.05
0.02
0.01
10ms
1
100ms
1s
0.01
Single Pulse
Mounted on 1in pad
o
R
θ
JA
: 62.5 C/W
2
0.1
DC
0.01
0.01
T
A
=25 C
0.1
1
10
100
O
1E-3
1E-4
1E-3
0.01
0.1
1
10 30
V
DS
- Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright
©
ANPEC Electronics Corp.
Rev. B.1 - Sep., 2005
4
www.anpec.com.tw
APM4548K
Typical Characteristics (Cont.)
N-Channel
Output Characteristics
30
V
GS
= 4, 5, 6, 7, 8, 9, 10V
Drain-Source On Resistance
40
35
30
25
20
15
10
5
V
GS
=4.5V
20
15
3V
R
DS(ON)
- On - Resistance (mΩ)
25
I
D
- Drain Current (A)
V
GS
=10V
10
5
2V
0.5
1.0
1.5
2.0
2.5
3.0
0
0.0
0
5
10
15
20
25
30
V
DS
- Drain-Source Voltage (V)
I
D
- Drain Current (A)
Transfer Characteristics
30
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Gate Threshold Voltage
I
DS
=250
µ
A
20
15
T
j
=125 C
10
T
j
=25 C
o
o
o
T
j
=-55 C
5
0
Normalized Threshold Voltage
5
25
I
D
- Drain Current (A)
0
1
2
3
4
0.2
-50 -25
0
25
50
75
100 125 150
V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
Copyright
©
ANPEC Electronics Corp.
Rev. B.1 - Sep., 2005
5
www.anpec.com.tw
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