Semiconductor
SQ6601PT
Off-Line Quasi-Resonance Flyback Switching Regulator
Description
The SQ6601PT is a hybrid IC consists from power MOSFET and a controller IC, designed for Indirect feed-back
Quasi-Resonant (including low frequency PRC)fly-back converter type SMPS (Switching Mode Power Supply)
applications. this IC realizes high efficiency, low noise, downsizing and standardizing of a power supply system
reducing external components count and simplifying the circuit designs. the device is provided in a five pin over-
molded TO-220 style package, affording dielectric isolation without compromising thermal characteristics.
(Note). PRC is abbreviation of “Pulse Ratio Control” (On-width control with fixed OFF-time).
Features
•
Quasi-Resonant Operation
•
Low-loss, Pulse-Ration-Control standby mode
•
Under-voltage lockout with Hysteresis
•
Adjustable switching speed for EMI control
•
Low start-up circuit current (100uA max)
•
Active low-pass filter for stabilizing the operation in case of light load
•
Avalanche Energy Guaranteed MOSFET with high VDSS
•
Built-in constant voltage drive circuit
•
Built-in step drive circuit
•
Built-in low frequency PRC mode (≒20kHz)
•
Pulse-by-pulse Overcurrent Protection (OCP)
•
Overvoltage Protection with latch mode (OVP)
•
Thermal Shutdown with latch mode (TSD)
•
Over-molded Five-Pin Package
Ordering Information
Type NO.
SQ6601PT
Marking
SQ6601PT
Package Code
TO-220F-5FL
Package Outline
TO-220 Fullpack (5 Lead)
KSD-I0U001-000
1
SQ6601PT
Internal Block Diagram
Pin Function
Pin Number
1
2
3
4
5
Pin Name
Drain
Source
GND
Vcc
FB/OCP
Power Switch MOSFET Drain Part
Power Switch MOSFET Source Part
Ground of the Control Section
Supply Voltage of Output Drive & Control Section
Voltage Mode Control Feedback Signal & Over Current Detection
Pin Function
Typical Connection Diagram
SQ6601PT
KSD-I0U001-000
2
SQ6601PT
Absolute maximum ratings
(Ta=25°C, Unless otherwise specified)
Characteristic
Drain Source Voltage
Drain Current
Peak Drain Current
Single Pulsed Avalanche Energy
Control Supply Voltage
FB/OCP Voltage Range
Power Dissipation
Thermal Resistance, Junction to Case
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Symbol
V
DS
I
D
I
DP
E
AS
V
CC
FB/OCP
P
D
R
thJC
T
J
T
opr
T
stg
Ratings
650
7
28
640
20
-0.3 ~ +6
40
3.12
150
-25 ~ +125
-55 ~ +150
Unit
V
A
A
mJ
V
V
W
°C
/W
°C
°C
°C
Note
-
T
C
= 25℃
Single Pulse
L=23mH,V
DD
=100V, I
DP
=7.0A
-
-
With infinite heatsink
-
-
-
-
Recommended Operating Conditions
Time for input of quasi resonant signals.
For the Quasi resonant signal inputted to the V
FB/OCP
terminal at the time of quasi resonant operation, the signal
should be wider than Tth(2)
≥
㎲
KSD-I0U001-000
3
SQ6601PT
Electrical Characteristics
(V
CC
= 11V, Ta = 25
°C
; Unless otherwise specified)
Characteristic
Start Threshold Voltage
Stop Threshold Voltage
Start up Supply Current
Operating Supply Current
Dynamic Operating Supply
Current
Maximum Off Time
Minimum Off Time
Minimum Input Pulse Width
Over Voltage Threshold
Latch Release Voltage
Latch Holding Current
Feedback Threshold Voltage
Css Snchronized Voltage
Feedback Sink Current
Thermal Shutdown Activation
Temperature
Drain-to-Source Breakdown
Voltage
Drain Leakage Current
On-State Resistance
Rise Time
Symbol
V
TH(ST)
V
TH(SP)
I
ST
I
CC
I
DCC
t
MAX
t
MIN
t
MIN(W)
V
OVP
V
RE
I
CC(RE)
V
FB
V
SYNC
I
SINK
T
J(TSD)
V
DS
I
DS
R
DS(ON)
tr
I
D
= 300uA
V
DS
= 650V
I
D
= 3.5A
10% to 90%
V
FB
= 1V
-
Test Conditions
V
CC
Increasing
V
CC
decreasing after turn on
start threshold voltage
V
CC
= V
TH(ST)
- 0.1V
V
FB
= 1V
-
Drain waveform high
Drain waveform high
Drain waveform high
V
CC
Increasing until shut down
output
V
CC
decreasing until latch
releasing
-
-
-
Min.
8.5
7.2
-
-
-
30
-
-
15.3
2.5
-
0.68
1.3
1.2
140
650
-
-
-
Typ.
9.5
8
-
3
4
-
-
-
17
-
-
0.73
1.45
1.35
-
-
-
-
-
Max.
10.5
8.8
100
7
10
60
1.5
1.0
18.7
6.0
400
0.78
1.6
1.5
-
-
300
1.2
250
Units
V
V
㎂
㎃
㎃
㎲
㎲
㎲
V
V
㎂
V
V
㎃
℃
V
㎂
Ω
ns
KSD-I0U001-000
4
SQ6601PT
Electrical Characteristic Curves
Fig. 1 I
CC
vs. Ta
㎃
Fig. 2 V
TH(SP)
vs. Ta
Fig. 3 I
ST
vs. Ta
Fig. 4 V
FB
vs. Ta
㎃
Fig. 5 V
TH(ST)
vs. Ta
㎂
Fig. 6 V
OH
vs. Ta
KSD-I0U001-000
5
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