APM9932/C
Dual Enhancement Mode MOSFET (N-and P-Channel)
Features
•
N-Channel
20V/15A, R
DS(ON)
=12mΩ(typ.) @ V
GS
=10V
R
DS(ON)
=17mΩ(typ.) @ V
GS
=4.5V
Pin Description
APM9932
S1
G1
S2
G2
1
2
3
4
8
7
6
5
D1
D1
D2
D2
S1
G1
S2
G2
APM9932C
1
2
3
4
8
7
6
5
D
D
D
D
•
P-Channel
-20V/-6A, R
DS(ON)
=30mΩ(typ.) @ V
GS
=-4.5V
R
DS(ON)
=45mΩ(typ.) @ V
GS
=-2.5V
SO-8
D1
D1
SO-8
D
•
•
•
Super High Dense Cell Design for Extremely
Low R
DS(ON)
Reliable and Rugged
SO-8 Package
G1
G1
G2
Applications
•
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
G2
S1
S1
S2
N-Channel MOSFET
S2
N- and P-Channel
MOSFET
D2
D2
P-Channel MOSFET
Ordering and Marking Information
APM9932/C
Handling Code
Temp. Range
Package Code
Package Code
K : SO-8
Operation Junction Temp. Range
C : -55 to 150
°
C
Handling Code
TR : Tape & Reel
APM9932/C K :
APM9932/C
XXXXX
XXXXX - Date Code
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002
1
www.anpec.com.tw
APM9932/C
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D*
I
DM
P
D
T
J
T
STG
R
θjA
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
T
A
=25°C
Maximum Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance – Junction to Ambient
T
A
=100°C
(T
A
= 25°C unless otherwise noted)
N-Channel
20
±16
15
30
2.5
1.0
150
-55 to 150
50
P-Channel
-20
±12
-6
-10
2.5
W
1.0
°C
°C
°C/W
A
V
Unit
* Surface Mounted on FR4 Board, t
≤
10 sec.
Electrical Characteristics
Symbol
Static
BV
DSS
I
DSS
V
GS(th)
I
GSS
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Parameter
(T
A
= 25°C unless otherwise noted)
APM9932/C
Min.
N-Ch
20
-20
1
-1
0.6
-0.6
1.3
-1.3
±100
±100
12
17
P-Ch
N-Ch
P-Ch
0.6
-0.6
30
45
18
27
42
60
1.3
-1.3
V
mΩ
nA
Typ. Max.
Test Condition
Unit
V
GS
=0V , I
DS
=250µA
V
DS
=18V , V
GS
=0V
V
DS
=-18V , V
GS
=0V
V
DS
=V
GS
, I
DS
=250µA
V
DS
=V
GS
, I
DS
=-250µA
V
GS
=±16V , V
DS
=0V
V
GS
=±12V , V
DS
=0V
V
GS
=10V , I
DS
=9A
V
GS
=4.5V , I
DS
=7A
V
GS
=-4.5V , I
DS
=-6A
V
GS
=-2.5V , I
DS
=-5A
I
SD
=5A , V
GS
=0V
I
SD
=-2A , V
GS
=0V
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
V
µA
V
Gate Leakage Current
R
DS(ON)
a
Drain-Source On-state
Resistance
V
SD
a
Diode Forward Voltage
Notes
a
: Pulse test ; pulse width
≤300µs,
duty cycle
≤
2%
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002
2
www.anpec.com.tw
APM9932/C
Electrical Characteristics (Cont.)
Symbol
Dynamic
a
Q
g
Q
gs
Q
gd
t
d(ON)
Total Gate Charge
N-Channel
V
DS
=10V , I
DS
= 6A
Gate-Source Charge
V
GS
=4.5V
P-Channel
V
DS
=-4V , I
DS
=-1A
V
GS
=-4.5V
N-Channel
V
DD
=10V , I
DS
=1A ,
T
r
Turn-on Rise Time
V
GEN
=4.5V , R
G
=10Ω
P-Channel
t
d(OFF)
T
f
C
iss
C
oss
C
rss
Turn-off Delay Time
V
DD
=-4V , I
DS
=-1A ,
V
GEN
=-4.5V , R
G
=10Ω
Turn-off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
N-Channel
V
GS
=0V , V
DS
=15V
Frequency=1.0MHz
P-Channel
V
GS
=0V , V
DS
=-4V
Frequency=1.0MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
14
19
5
4.1
2.8
1.6
6
23
5
45
16
45
5
32
1225
1400
330
520
220
320
pF
12
45
10
80
40
90
20
55
ns
22
25
nC
Parameter
(T
A
= 25°C unless otherwise noted)
APM9932/C
Min.
Typ. Max.
Test Condition
Unit
Gate-Drain Charge
Turn-on Delay Time
Notes
a
: Guaranteed by design, not subject to production testing
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002
3
www.anpec.com.tw
APM9932/C
Typical Characteristics
N-Channel
Output Characteristics
20
V
GS
=3,4,5,6,7,8,9,10V
Transfer Characteristics
20
I
D
-Drain Current (A)
I
D-
Drain Current (A)
16
V
GS
=2.5V
15
12
10
8
V
GS
=2V
T
J
=125°C
5
T
J
=25°C
T
J
=-55°C
4
0
0
2
4
6
8
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.50
I
DS
=250uA
On-Resistance vs. Drain Current
0.030
V
GS(th)-
Threshold Voltage (V)
(Normalized)
1.00
0.75
0.50
0.25
0.00
-50
R
DS(ON)
-On-Resistance (Ω)
1.25
0.025
0.020
0.015
0.010
0.005
0.000
V
GS
=4.5V
V
GS
=10V
-25
0
25
50
75
100 125 150
0
4
8
12
16
20
Tj - Junction Temperature (°C)
I
D
- Drain Current (A)
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002
4
www.anpec.com.tw
APM9932/C
Typical Characteristics (Cont.)
N-Channel
On-Resistance vs. Gate-to-Source Voltage
0.16
I
D
=15A
On-Resistance vs. Junction Temperature
2.0
V
GS
=10V
I
D
=15A
R
DS(ON)
-On-Resistance (Ω)
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0
1
2
3
4
5
6
7
8
9
10
R
DS(ON)
-On-Resistance (Ω)
(Normalized)
0.14
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
-25
0
25
50
75
100 125
150
V
GS
- Gate-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
Gate Charge
10
V
DS
=10V
I
D
=6A
Capacitance
1800
Frequency=1MHz
V
GS
-Gate-Source Voltage (V)
8
1500
Capacitance (pF)
Ciss
6
1200
900
600
Coss
4
2
300
Crss
0
0
5
10
15
20
25
30
0
0
5
10
15
20
Q
G
- Gate Charge (nC)
V
DS
- Drain-to-Source Voltage (V)
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Oct., 2002
5
www.anpec.com.tw
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