HANBit
HMF2M32M4VGL
Flash-ROM Module 8MByte (2Mx32Bit), 72Pin-SIMM, 3.3V Design
Part No. HMF2M32M4VGL
GENERAL DESCRIPTION
The HMF2M32M4VGL is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a
x32bit configuration. The module consists of four 2M x 8bit FROM mounted on a 72 -pin, single-sided, FR4-printed circuit
board.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the
device is similar to reading from 12.0V flash or EPROM devices.
Four chip enable inputs, (/WE0, /WE1, /WE2, /WE3) are used to enable the module’s 8 bits independently. Output enable
(/OE) and write enable (/WE) can set the memory input and output.
When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power
design. All module components may be powered from a single + 3.3V DC power supply and all inputs and outputs are TTL-
compatible.
FEATURES
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Access time : 70, 80, 90, 120ns
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High-density 8MByte design
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High-reliability, low-power design
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Single + 3.3V
±
0.3V power supply
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Easy memory expansion
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All inputs and outputs are TTL-compatible
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FR4-PCB design
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Low profile 72-pin SIMM
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Minimum 1,000,000 write/erase cycle
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Sectors erase architecture
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Sector group protection
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Temporary sector group unprotection
PIN
1
2
3
4
5
6
7
8
9
10
11
12
13
Symbol
Vss
NC
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
Vcc
DQ7
/WE0
/RY_BY
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
/WE1
NC
DQ16
PIN ASSIGNMENT
PIN
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
Symbol
DQ17
DQ18
DQ19
DQ20
DQ21
Vcc
DQ22
DQ23
/WE2
NC
DQ24
DQ25
DQ26
DQ27
Vss
DQ28
DQ29
DQ30
DQ31
/WE3
NC
/RESET
A2
/OE
PIN
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
Symbol
/BANKE0
A3
A4
A5
A6
A7
A8
A9
A10
A11
Vcc
A12
A13
A14
A15
A16
A17
A18
A19
A20
A0
A1
NC
Vss
OPTIONS
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Timing
70ns access
80ns access
90ns access
120ns access
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Packages
72-pin SIMM
MARKING
-70
-80
-90
-120
14
15
16
17
18
19
20
21
M
22
23
24
URL :
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REV,02(August,2002)
1
HANBit Electronics Co., Ltd.
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FUNCTIONAL BLOCK DIAGRAM
HMF2M32M4VGL
32
DQ0 - DQ31
20
A0
–
A19
A0-19
DQ 0-7
/WE0
/WE
/OE
/CE
RY-BY
/Reset
U1
A0-20
DQ 8-15
/WE1
/WE
/OE
/CE
RY-BY
/Reset
U2
A0-20
DQ16-23
/WE2
/WE
/OE
/CE
RY-BY
/Reset
U3
A0-20
DQ24-31
/WE3
/OE
/BANK-E0
/RY_BY
/Reset
/WE
/OE
/CE
RY-BY
/Reset
U4
URL :
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REV,02(August,2002)
2
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TRUTH TABLE
MODE
STANDBY
NOT SELECTED
READ
WRITE or ERASE
NOTE:
X means don’t care
/OE
X
H
L
X
/CE
H
L
L
L
/WE
X
H
H
L
/RESET
Vcc±0.3V
H
H
H
HMF2M32M4VGL
DQ ( /BYTE=L )
HIGH-Z
HIGH-Z
D
OUT
D
IN
POWER
STANDBY
ACTIVE
ACTIVE
ACTIVE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Voltage with respect to ground all other pins
Voltage with respect to ground Vcc
SYMBOL
V
IN,OUT
V
CC
RATING
-0.5V to Vcc+0.5V
-0.5V to +4.0V
Storage Temperature
T
STG
-65oC to +150oC
Operating Temperature
T
A
-55oC to +125 oC
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Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device .
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
Vcc for
±
10% device Supply Voltages
Ground
SYMBOL
Vcc
V
SS
MIN
2.7V
0
0
TYP.
MAX
3.6V
0
DC AND OPERATING CHARACTERISTICS
( 0oC
≤
TA
≤
70 oC )
PARAMETER
Input Load Current
A9 Input Loda Current
Output Leakage Current
TEST CONDITIONS
Vcc=Vcc max, V
IN
= Vss to Vcc
Vcc=Vcc max, ; A9=12.5 V
Vcc=Vcc max, V
OUT
= Vss to Vcc
/CE= V
IL,
/OE= V
IH,
Byte Mode
Vcc Active Read Current (1)
/CE= V
IL,
/OE= V
IH,
Word Mode
Vcc Active Write Current
/CE = V
IL
, /OE=V
IH
(Note2,3,4)
Vcc Standby Current(Note2)
/CE, /RESET=Vcc±0.3V
I
CC3
0.2
5
mA
I
CC2
20
30
mA
5MHz
1MHz
5MHz
1MHz
I
CC1
9
2
16
4
SYMBO
L
I
L1
I
L1T
I
L0
9
2
MIN
TYP
MAX
±1.0
35
±1.0
16
4
µA
UNI
T
µA
µA
µA
URL :
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REV,02(August,2002)
3
HANBit Electronics Co., Ltd.
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Vcc Standby Current During
/RESET=Vss±0.3V
Reset(Note2)
Automatic Sleep Mode(Note2,5)
Input Low Voltage
Input High Voltage
Voltage for Autoselect and
V
CC
= 3.3V
Temporary Sector Unprotect
Output Low Voltage
I
OL
= 4.0mA, Vcc =Vcc min
I
OH
= -2.0mA, Vcc =Vcc min
Output High Voltage
I
OH
= -100µA, Vcc =Vcc min
Low Vcc Lock-Out Voltage(Note
V
LKO
4)
Notes
1.
2.
3.
c
Vcc-0.4
V
OL
0.85×Vc
V
ID
V
IH
= Vcc
±0.3V;
V
IL
= Vss
±0.3V;
V
CC5
V
IL
V
IH
I
CC4
HMF2M32M4VGL
0.2
5
mA
0.2
-0.5
0.7×Vc
c
11.5
5
0.8
Vcc+0
V
V
V
.3
12.5
0.45
V
V
V
2.3
2.5
V
The Icc Current listed is typically less than 2 ma/MHz,with /OE at V
IH.
Typical Vcc is 3.0V.
Maximum Icc Specifications are tested with Vcc=Vccmax.
Icc active while Embedded Erase of Embedded Program is in progress .
ERASE AND PROGRAMMING PERFORMANCE
LIMITS
PARAMETER
MIN.
Sector Erase Time
Chip Erase Time
Byte Programming Time
Chip Programming Time
-
-
-
TYP.
0.7
25
9
18
300
54
MAX.
15
sec
sec
µs
sec
Excludes system-level
overhead
Excludes 00H programming
prior to erasure
UNIT
COMMENTS
TSOP CAPACITANCE
PARAMETER
SYMBOL
C
IN
C
OUT
C
IN2
PARAMETER
DESCRIPTION
Input Capacitance
Output Capacitance
Control Pin Capacitance
TEST SETUP
V
IN
= 0
V
OUT
= 0
V
IN
= 0
MIN
6
8.5
7.5
MAX
7.5
12
9
UNIT
pF
pF
pF
Notes
: Test conditions T
A
= 25
o
C, f=1.0 MHz.
URL :
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REV,02(August,2002)
4
HANBit Electronics Co., Ltd.
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AC CHARACTERISTICS
u
Read Only Operations Characteristics
PARAMETER
SYMBOLS
DESCRIPTION
JEDEC STANDARD
t
AVAV
t
AVQV
t
ELQV
t
GLQV
t
EHQZ
t
GHQZ
t
RC
t
ACC
t
CE
t
OE
t
DF
t
DF
Read Cycle Time (Note 1)
Address to Output Delay
Chip Enable to Output Delay
Chip Enable to Output Delay
Chip Enable to Output High-Z
Output Enable to Output High-Z
Read
Output Enable
Toggle and
Hold Time(Note 1)
t
AXQX
t
QH
Notes
:
1. Not 100% tested.
2. See Figure 5 and Table 10 for test specifications.
/Data Polling
Output Hold Time From Addresses,
/CE or /OE, Whichever Occurs First
Min
Min
/CE = V
IL
/OE = V
IL
/OE = V
IL
Min
Max
Max
Max
Max
Max
Min
TEST SETUP
-70R
70
70
70
30
25
25
HMF2M32M4VGL
Speed Options
UNIT
-80
80
80
80
30
25
25
0
ns
10
0
ns
-90
90
90
90
35
30
30
-120
120
120
120
35
30
30
ns
ns
ns
ns
ns
ns
TEST SPECIFICATIONS
TEST CONDITION
Output load
Output load capacitance,C
L
(Including jig capacitance)
Input rise and fall times
Input pulse levels
Input timing measurement reference levels
Output timing measurement reference levels
30
5
0.0-3.0
1.5
1.5
70R, 80
1TTL gate
100
pF
ns
V
V
V
90, 120
UNIT
3.3V
2.7kΩ
Device
Under
Test
C
L
IN3064
or Equivalent
6.2kΩ
Diodes = IN3064
or Equivalent
Note
: C
L
= 100pF including jig capacitance
URL :
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REV,02(August,2002)
5
HANBit Electronics Co., Ltd.
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