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CMBD2835

Description
SILICON PLANAR DUAL SWITCHING DIODES
File Size119KB,3 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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CMBD2835 Overview

SILICON PLANAR DUAL SWITCHING DIODES

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR DUAL SWITCHING DIODES
CMBD2835
CMBD2836
SOT-23
Formed SMD Package
3
Pin Configuration
1 = CATHODE
2 = CATHODE
3 = ANODE
1
2
Marking
CMBD2835 - A3
CMBD2836 - A2
High-Speed Switching Dual Diodes, Common Anode
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Reverse Voltage
CMBD2835
CMBD2836
Forward Current
Total Device Dissipation T
a
=25ºC *
Derate above 25
o
C
Thermal Resistance Junction to
Ambient
Total Device Dissipation T
a
=25ºC **
o
Derate above 25 C
Thermal Resistance Junction to
Ambient
Junction and Storage Temperature
SYMBOL
V
R
I
F
P
D
R
th(j-a)
P
D
R
th(j-a)
T
j
, T
stg
VALUE
35
75
100
225
1.8
556
300
2.4
417
- 55 to +150
UNIT
V
V
mA
mW
o
mW/ C
o
C/W
mW
mW/
o
C
o
C/W
o
C
* FR-5 Board=25.4 x 19.05 x 1.58 mm (1.0 x 0.75 x 0.062 inches)
** Alumina Substrate=10.16 x 7.62 x 0.61 mm (0.4 x 0.3 x 0.024 inches) 99.5% alumina.
ELECTRICAL CHARACTERISTICS (T
a
=25º C unless specified otherwise)
DESCRIPTION
Reverse Breakdown Voltage
SYMBOL
V
BR
TEST CONDITION
I
R
=100µA
CMBD2835
CMBD2836
Reverse Voltage Leakage Current
I
R
CMBD2835
V
R
=30V
CMBD2836
V
R
=50V
Diode Capacitance
Forward Voltage
C
T
V
F
V
R
=0V, f=1MHz
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
=I
R
=10mA, i
R(REC)
=1.0 mA
Data Sheet
MIN
35
75
TYP
MAX
UNIT
V
V
100
nA
100
4.0
1.0
1.0
1.2
4.0
nA
pF
V
V
V
ns
Page 1 of 3
Reverse Recovery Time
Continental Device India Limited
t
rr

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