SGSF464
SGSIF464
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
s
s
s
s
SGS-THOMSON PREFERRED SALESTYPES
HIGH VOLTAGE CAPABILITY
VERY HIGH SWITCHING SPEED
LOW BASE-DRIVE REQUIREMENTS
U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734 (N))
3
2
1
APPLICATIONS:
s
SWITCH MODE POWER SUPPLIES
s
HORIZONTAL DEFLECTION FOR COLOUR
TVS AND MONITORS
DESCRIPTION
The SGSF464 and SGSIF464 are manufactured
using Multiepitaxial Mesa technology for
cost-effective high performance and uses a
Hollow Emitter structure to enhance switching
speeds.
The SGSF series is designed for high speed
switching applications such as power supplies
and horizontal deflection circuits in TVs and
monitors.
TO-218
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
s tg
T
j
June 1996
Parameter
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
T otal Dissipation at T
c
= 25 C
Storage Temperature
Max. Operating Junction T emperature
o
Valu e
1200
600
7
10
15
7
12
125
-65 to 150
150
57
Un it
V
V
V
A
A
A
A
W
o
o
C
C
1/7
SGSF464/SGSIF464
THERMAL DATA
TO-218
R
t hj-ca se
R
t hj- amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
1
30
ISO WATT218
2.2
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symb ol
I
CES
I
CEO
I
EBO
Parameter
Collector Cut-off
Current (V
BE
= 0)
Collector Cut-off
Current (I
B
= 0)
Emitter Cut-off Current
(I
C
= 0)
Test Cond ition s
V
CE
= 1200 V
V
EC
= 380 V
V
EC
= 600 V
V
BE
= 7 V
I
C
= 100 mA
I
C
= 6 A
I
C
= 3.5 A
I
C
= 6 A
I
C
= 3.5 A
I
B
= 1.2 A
I
B
= 0.5 A
I
B
= 1.2 A
I
B
= 0.5 A
0.6
2.45
0.12
0.6
1.7
0.12
0.6
1.3
0.2
1.4
0.1
2.8
0.2
600
1.5
1.5
1.5
1.5
1.2
3.5
0.4
Min.
Typ .
Max.
200
200
2
1
Un it
µA
µA
mA
mA
V
V
V
V
V
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
V
CEO(sus )
∗
Collector-Emitter
Sustaining Voltage
V
CE(sat )
∗
V
BE(s at)
∗
t
ON
t
s
t
f
t
ON
t
s
t
f
t
ON
t
s
t
f
t
s
t
f
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Turn-on T ime
Storage Time
Fall T ime
Turn-on T ime
Storage Time
Fall T ime
Turn-on T ime
Storage Time
Fall T ime
Storage Time
Fall T ime
RESISTIVE LO AD
I
C
= 6 A
v
CC
= 250 v
I
B1
= -2 A
I
B1
= 1 A
RESISTIVE LO AD
v
CC
= 250 v
I
C
= 5 A
I
B1
= -2 A
I
B1
= 1 A
With Antisaturation Network
RESISTIVE LO AD
I
C
= 5 A
V
CC
= 250 V
V
BE
(off) = - 5 V
I
B1
= 1 A
INDUCTIVE LOAD
h
FE
= 5
I
C
= 5 A
V
CL
= 450 V V
BE(off )
= -5 V
L = 300
µH
R
BB
= 0.8
Ω
INDUCTIVE LOAD
h
FE
= 5
I
C
= 5 A
V
CL
= 450 V V
BE(off )
= -5 V
L = 300
µH
R
BB
= 0.8
Ω
o
T
c
= 100 C
t
s
t
f
Storage Time
Fall T ime
4
0.3
µs
µs
∗
Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
2/7
SGSF464/SGSIF464
Safe Operating AreaThermal Impedance
Derating Curve
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Reverse Biased SOA
3/7
SGSF464/SGSIF464
Resistive Load Switching Times
Resistive Load Switching Times
Switching Times Percentance Variation
4/7
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