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HSD32M32M4V-13

Description
Synchronous DRAM Module 128Mbyte ( 32M x 32-Bit ) 72-Pin SIMM based on 32Mx8, 4Banks, 8K Ref., 3.3V
Categorystorage    storage   
File Size83KB,10 Pages
ManufacturerHANBIT Electronics
Websitehttp://www.hbe.co.kr/
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HSD32M32M4V-13 Overview

Synchronous DRAM Module 128Mbyte ( 32M x 32-Bit ) 72-Pin SIMM based on 32Mx8, 4Banks, 8K Ref., 3.3V

HSD32M32M4V-13 Parametric

Parameter NameAttribute value
MakerHANBIT Electronics
package instruction,
Reach Compliance Codeunknow
HANBit
HSD32M32M4V
Synchronous DRAM Module 128Mbyte ( 32M x 32-Bit ) 72-Pin SIMM based on
32Mx8, 4Banks, 8K Ref., 3.3V
Part No. HSD32M32M4V
GENERAL DESCRIPTION
The HSD32M32M4V is a 32M x 32 bit Synchronous Dynamic RAM high density memory module. The module consists
of four CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II packages mounted on a 72-pin, FR-4-printed circuit
board. Two 0.01uF decoupling capacitor is mounted on the printed circuit board in parallel for each SDRAM. The
HSD32M32M4V is a SIMM designed. Synchronous design allows precise cycle control with the use of system clock. I/O
transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same
device to be useful for a variety of high bandwidth, high performance memory system applications All module components
may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.
FEATURES
Part Identification
HSD32M32M4V-13/F13 :133MHz ( CL=3)
HSD32M32M4V-12/F12: 125MHz (CL=3)
HSD32M32M4V-10/F10: 100MHz (CL=2)
HSD32M32M4V-10L/F10L: 100MHz
F means Auto & Self refresh with Low
Power (3.3V)
Burst mode operation
Auto & self refresh capability (8192 Cycles/64ms)
LVTTL compatible inputs and outputs
Single 3.3V
±0.3V
power supply
MRS cycle with address key programs
- Latency (Access from column address)
- Burst length (1, 2, 4, 8 & Full page)
- Data scramble (Sequential & Interleave)
All inputs are sampled at the positive going edge
of the system clock
FR4-PCB design
72-Pin SIMM Package
The used device is 8Mx8bitx4Bank SRAM
Pin assignment is compatible with
- HSD8M32M4V
- HSD16M32M4V
PIN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
PIN ASSIGNMENT
SYMBOL
Vss
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQM0
Vcc
NC
A0
A1
A2
A3
A4
Vss
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
PIN
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
SYMBOL
DQ14
DQ15
DQM1
NC
/WE
/CAS
Vcc
/RAS
/CS0
NC
NC
CLK0
CKE0
Vss
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQM2
Vcc
PIN
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
SYMBOL
A5
A6
A7
A8
A9
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
DQM3
NC
A10/AP
A11
A12
Vcc
BA0
BA1
NC
NC
Vss
72-PIN SIMM TOP VIEW
URL:www.hbe.co.kr
REV.1.0 (August.2002)
-1-
HANBit Electronics Co.,Ltd

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Description Synchronous DRAM Module 128Mbyte ( 32M x 32-Bit ) 72-Pin SIMM based on 32Mx8, 4Banks, 8K Ref., 3.3V Synchronous DRAM Module 128Mbyte ( 32M x 32-Bit ) 72-Pin SIMM based on 32Mx8, 4Banks, 8K Ref., 3.3V Synchronous DRAM Module 128Mbyte ( 32M x 32-Bit ) 72-Pin SIMM based on 32Mx8, 4Banks, 8K Ref., 3.3V Synchronous DRAM Module 128Mbyte ( 32M x 32-Bit ) 72-Pin SIMM based on 32Mx8, 4Banks, 8K Ref., 3.3V Synchronous DRAM Module 128Mbyte ( 32M x 32-Bit ) 72-Pin SIMM based on 32Mx8, 4Banks, 8K Ref., 3.3V
Maker HANBIT Electronics HANBIT Electronics - HANBIT Electronics HANBIT Electronics
Reach Compliance Code unknow unknow - unknow unknow
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