BFP740F
NPN Silicon Germanium RF Transistor
•
High gain ultra low noise RF transistor
•
Provides outstanding performance for
a wide range of wireless applications
up to 10 GHz and more
•
Ideal for CDMA and WLAN applications
•
Outstanding noise figure
F
= 0.5 dB at 1.8 GHz
Outstanding noise figure
F
= 0.75 dB at 6 GHz
•
High maximum stable gain
G
ms
= 27.5 dB at 1.8 GHz
•
Gold metallization for extra high reliability
•
150 GHz
f
T
-Silicon Germanium technology
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Top View
4
3
3
4
1
2
XYs
1
2
Direction of Unreeling
Type
BFP740F
Maximum Ratings
Parameter
Marking
R7s
1=B
Pin Configuration
2=E
3=C
4=E
Symbol
V
CEO
Package
-
TSFP-4
Value
Unit
-
Collector-emitter voltage
T
A
> 0°C
T
A
≤
0°C
V
4
3.5
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
≤
90°C
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
13
13
1.2
30
3
160
150
-65 ... 150
-65 ... 150
mW
°C
mA
Junction temperature
Ambient temperature
Storage temperature
1
T
is measured on the collector lead at the soldering point to the pcb
S
2005-11-08
1
BFP740F
Thermal Resistance
Parameter
Symbol
R
thJS
Value
≤
370
Unit
Junction - soldering point
1)
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 13 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 5 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 0.5 V,
I
C
= 0
DC current gain
I
C
= 25 mA,
V
CE
= 3 V, pulse measured
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
Unit
max.
-
30
100
3
400
V
µA
nA
µA
-
typ.
4.7
-
-
-
250
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
4
-
-
-
160
2005-11-08
2
BFP740F
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
AC Characteristics
(verified by random sampling)
Transition frequency
f
T
I
C
= 25 mA,
V
CE
= 3 V,
f
= 1 GHz
Collector-base capacitance
V
CB
= 3 V,
f
= 1 MHz,
V
BE
= 0 ,
emitter grounded
Collector emitter capacitance
V
CE
= 3 V,
f
= 1 MHz,
V
BE
= 0 ,
base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz,
V
CB
= 0 ,
collector grounded
Noise figure
I
C
= 8 mA,
V
CE
= 3 V,
f
= 1.8 GHz,
Z
S
=
Z
Sopt
I
C
= 8 mA,
V
CE
= 3 V,
f
= 6 GHz,
Z
S
=
Z
Sopt
Power gain, maximum stable
1)
I
C
= 25 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
Power gain, maximum available
1)
I
C
= 25 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 6 GHz
Transducer gain
I
C
= 25 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 1.8 GHz
f
= 6 GHz
Third order intercept point at output
2)
V
CE
= 3 V,
I
C
= 25 mA,
Z
S
=Z
L
=50
Ω
,
f
=
1
.
8 GHz
1dB Compression point at output
I
C
= 25 mA,
V
CE
= 3 V,
Z
S
=Z
L
=50
Ω
,
f
=
1
.
8 GHz
1
G
1/2
ma
= |
S
21e
/
S
12e
| (k-(k²-1) ),
G
ms
= |
S
21e
/
S
12e
|
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50
Ω
from 0.1 MHz to 6 GHz
-
-
42
0.08
-
0.14
GHz
pF
C
cb
C
ce
-
0.2
-
C
eb
-
0.44
-
F
-
-
G
ms
-
0.5
0.75
27.5
-
-
-
dB
dB
G
ma
-
19
-
dB
|S
21e
|
2
-
-
IP
3
P
-1dB
-
-
25
15
25
11
-
-
-
-
dB
dBm
2005-11-08
3
BFP740F
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transitor Chip Data:
IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
AF =
384.4
400
1.586
1.28
1.5
1.69
220
2.1
290
550
13
180
910
1
aA
V
-
V
-
Ω
fF
ps
mA
mV
ps
m
m
-
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
KF =
1.1
512.1
62
5
3.23
90
590
3
100
152
79.7
-2.2
950
0
k
mA
-
mA
Ω
mΩ
mV
-
mdeg
m
fF
-
m
-
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
1.018
4.296
1
3.85
10
6.88
70
1.32
99.5
10
570
1.11
298
-
fA
-
fA
A
Ω
m
V
fF
m
mV
eV
K
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil- und Satellitentechnik (IMST)
Package Equivalent Circuit:
CBS
RBS
CBCC
C
BFP740F_Chip
B
S
LCC
B
LBB
LBC
CBEC
RCS CCS
E
RES
CES
LCB
C
LEC
REC
CBEI
LEB
CBEO
CCEO
CCEI
E
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http://www.infineon.com
LBC =
LCC =
LEC =
LBB =
LCB =
LEB =
CBEC =
CBCC =
CES =
CBS =
CCS =
CCEO =
CBEO =
CCEI =
CBEI =
REC =
RBS =
RCS =
RES =
0.1
0.2
20
0.411
0.696
21
0.1
1
0.34
39
75
0.177
92
0.217
52
2
3.5
1.65
90
nH
nH
pH
nH
nH
pH
pF
fF
pF
fF
fF
pF
fF
pF
fF
Ω
mΩ
mΩ
Ω
Valid up to 6GHz
2005-11-08
4
BFP740F
Total power dissipation
P
tot
=
ƒ(
T
S
)
Permissible Pulse Load
R
thJS
=
ƒ(
t
p
)
180
mW
10
3
140
120
100
K/W
R
thJS
P
tot
10
2
80
60
40
20
0
0
10
1 -7
10
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
15
30
45
60
75
90 105 120
°C
150
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
T
S
t
p
Permissible Pulse Load
P
totmax
/
P
totDC
=
ƒ(
t
p
)
10
2
Collector-base capacitance
C
cb
=
ƒ
(
V
CB
)
f
= 1 MHz
0.2
P
totmax
/P
totDC
0.18
-
0.16
0.14
C [pF]
10
1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0.12
cb
0.1
0.08
0.06
0.04
0.02
10
0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
0
t
p
0
2
4
6
8
10
12
V
CB
[V]
2005-11-08
5
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