BPV10
www.vishay.com
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Radiant sensitive area (in mm
2
): 0.78
• High photo sensitivity
• High radiant sensitivity
94 8390
• Suitable for visible and near infrared radiation
• High bandwidth: 250 MHz at V
R
= 12 V
• Fast response times
DESCRIPTION
BPV10 is a PIN photodiode with high speed and high radiant
sensitivity in clear, T-1¾ plastic package. It is sensitive to
visible and near infrared radiation.
• Angle of half sensitivity:
ϕ
= ± 20°
• Compliant to RoHS Directive 2002/95/EC and in
accordance with WEEE 2002/96/EC
Note
**
Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• High speed photo detector
PRODUCT SUMMARY
COMPONENT
BPV10
Note
• Test condition see table “Basic Characteristics”
I
ra
(μA)
70
ϕ
(deg)
± 20
λ
0.1
(nm)
380 to 1100
ORDERING INFORMATION
ORDERING CODE
BPV10
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM
T-1¾
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
t
≤
5 s, 2 mm from body
Connected with Cu wire, 0.14
mm
2
T
amb
≤
25 °C
TEST CONDITION
SYMBOL
V
R
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
60
215
100
- 40 to + 100
- 40 to + 100
260
350
UNIT
V
mW
°C
°C
°C
°C
K/W
Rev. 1.9, 22-Nov-11
Document Number: 81502
1
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BPV10
www.vishay.com
Vishay Semiconductors
TEST CONDITION
I
F
= 50 mA
I
R
= 100 μA, E = 0
V
R
= 20 V, E = 0
V
R
= 0 V, f = 1 MHz, E = 0
V
R
= 5 V, f = 1 MHz, E = 0
E
A
= 1 klx
E
e
= 1 mW/cm
2
,
λ
= 950 nm
E
A
= 1 klx
E
e
= 1
E
e
= 1
mW/cm
2
,
mW/cm
2
,
λ
= 950 nm
E
A
= 1 klx, V
R
= 5 V
SYMBOL
V
F
V
(BR)
I
ro
C
D
C
D
V
O
V
O
I
K
I
K
I
ra
I
ra
s(λ)
ϕ
λ
p
λ
0.1
λ
= 950 nm
V
R
= 20 V,
λ
= 950 nm
V
R
= 20 V,
λ
= 950 nm
V
R
= 50 V, R
L
= 50
Ω, λ
= 820 nm
V
R
= 50 V, R
L
= 50
Ω, λ
= 820 nm
η
NEP
D
t
r
t
f
3x
38
60
1
11
3.8
480
450
80
65
85
70
0.55
± 20
920
380 to 1100
72
10
-14
3 x 10
12
2.5
2.5
5
MIN.
TYP.
1.0
MAX.
1.3
UNIT
V
V
nA
pF
pF
mV
mV
μA
μA
μA
μA
A/W
deg
nm
nm
%
W/√Hz
cm√Hz/W
ns
ns
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit voltage
Short circuit current
Reverse light current
Absolute spectral sensitivity
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Quantum efficiency
Noise equivalent power
Detectivity
Rise time
Fall time
λ
= 950 nm,
V
R
= 5 V
V
R
= 5 V,
λ
= 950 nm
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
I
ra, rel
- Relative Reverse Light Current
1000
I
ro
- Reverse Dark Current (nA)
1.4
1.2
100
V
R
= 5 V
λ
= 950 nm
1.0
10
0.8
V
R
= 20 V
1
20
40
60
80
100
0.6
0
20
40
60
80
100
94 8436
T
amb
- Ambient Temperature (°C)
94 8416
T
amb
- Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Rev. 1.9, 22-Nov-11
Document Number: 81502
2
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BPV10
www.vishay.com
Vishay Semiconductors
S (
λ
)
rel
- Relative Spectral Sensitivity
1000
I
ra
- Reverse Light Current (µA)
1.0
0.8
0.6
0.4
0.2
0
350
100
10
1
V
R
= 5 V
λ
= 950 nm
0.1
0.01
94 8437
0.1
1
10
94 8440
550
750
950
1150
E
e
- Irradiance (mW/cm
2
)
λ
- Wavelength (nm)
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
100
0°
10°
20°
30°
ϕ
- Angular Displacement
I
ra
- Reverse Light Current (µA)
1 mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
10
2
λ
= 950 nm
S
rel
- Relative Sensitivity
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.1 mW/cm
2
0.05 mW/cm
2
0.02 mW/cm
2
1
0.1
94 8438
1
10
100
94 8624
0.6
0.4
0.2
0
V
R
- Reverse Voltage (V)
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
12
C
D
- Diode Capacitance (pF)
10
8
6
4
2
0
0.1
1
10
100
E=0
f = 1 MHz
94 8439
V
R
- Reverse Voltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Rev. 1.9, 22-Nov-11
Document Number: 81502
3
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BPV10
www.vishay.com
PACKAGE DIMENSIONS
in millimeters
Vishay Semiconductors
C
A
Ø5
± 0.15
5.75
Chip position
(4.3)
± 0.15
R 2.45 (sphere)
± 0.3
± 0.3
± 0.5
11.8
8.6
7.6
± 0.15
< 0.7
34.8
Area not plane
1
+ 0.2
- 0.1
0.8
+ 0.2
- 0.1
± 0.25
0.63
+ 0.2
- 0.1
0.5
+ 0.15
1.5
2.54 nom.
Drawing-No.: 6.544-5185.02-4
Issue:1; 01.07.96
96 12199
technical drawings
according to DIN
specifications
Rev. 1.9, 22-Nov-11
Document Number: 81502
4
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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Revision: 08-Feb-17
1
Document Number: 91000