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BPV10

Description
Photodiodes 10V 215mW 875nm
CategoryLED optoelectronic/LED   
File Size104KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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Photodiodes 10V 215mW 875nm

BPV10 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerVishay
Product CategoryPhotodiodes
RoHSDetails
ProductPIN Photodiodes
Mounting StyleThrough Hole
Peak Wavelength920 nm
Dark Current1 nA
Vr - Reverse Voltage60 V
Rise Time2.5 ns
Fall Time2.5 ns
Half Intensity Angle Degrees20 deg
Maximum Operating Temperature+ 100 C
Minimum Operating Temperature- 40 C
Height8.6 mm
Length5.75 mm
PackagingBulk
Width5.75 mm
If - Forward Current50 mA
Noise Equivalent Power - NEP3E-14 W/sqrt Hz
Pd - Power Dissipation215 mW
Photocurrent85 uA
Responsivity0.55 A/W
Factory Pack Quantity4000
Vf - Forward Voltage1 V
BPV10
www.vishay.com
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Radiant sensitive area (in mm
2
): 0.78
• High photo sensitivity
• High radiant sensitivity
94 8390
• Suitable for visible and near infrared radiation
• High bandwidth: 250 MHz at V
R
= 12 V
• Fast response times
DESCRIPTION
BPV10 is a PIN photodiode with high speed and high radiant
sensitivity in clear, T-1¾ plastic package. It is sensitive to
visible and near infrared radiation.
• Angle of half sensitivity:
ϕ
= ± 20°
• Compliant to RoHS Directive 2002/95/EC and in
accordance with WEEE 2002/96/EC
Note
**
Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• High speed photo detector
PRODUCT SUMMARY
COMPONENT
BPV10
Note
• Test condition see table “Basic Characteristics”
I
ra
(μA)
70
ϕ
(deg)
± 20
λ
0.1
(nm)
380 to 1100
ORDERING INFORMATION
ORDERING CODE
BPV10
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM
T-1¾
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
t
5 s, 2 mm from body
Connected with Cu wire, 0.14
mm
2
T
amb
25 °C
TEST CONDITION
SYMBOL
V
R
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
60
215
100
- 40 to + 100
- 40 to + 100
260
350
UNIT
V
mW
°C
°C
°C
°C
K/W
Rev. 1.9, 22-Nov-11
Document Number: 81502
1
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

BPV10 Related Products

BPV10 BPV10F
Description Photodiodes 10V 215mW 875nm Photodiodes 10V 215mW 875nm
Product Attribute Attribute Value Attribute Value
Manufacturer Vishay Vishay
Product Category Photodiodes Photodiodes
RoHS Details Details
Product PIN Photodiodes PIN Photodiodes
Mounting Style Through Hole Through Hole
Peak Wavelength 920 nm 920 nm
Dark Current 1 nA 1 nA
Vr - Reverse Voltage 60 V 60 V
Rise Time 2.5 ns 2.5 ns
Fall Time 2.5 ns 2.5 ns
Half Intensity Angle Degrees 20 deg 20 deg
Maximum Operating Temperature + 100 C + 100 C
Minimum Operating Temperature - 40 C - 40 C
Height 8.6 mm 8.6 mm
Length 5.75 mm 5.75 mm
Packaging Bulk Bulk
Width 5.75 mm 5.75 mm
If - Forward Current 50 mA 50 mA
Noise Equivalent Power - NEP 3E-14 W/sqrt Hz 3E-14 W/sqrt Hz
Pd - Power Dissipation 215 mW 215 mW
Photocurrent 85 uA 85 uA
Responsivity 0.55 A/W 0.55 A/W
Factory Pack Quantity 4000 4000
Vf - Forward Voltage 1 V 1 V

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