ZTX557STOA datasheet, PDF - EEWORLD Datasheet

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ZTX557STOA: DescriptionBipolar Transistors - BJT PNP High Voltage; Categorysemiconductor Discrete semiconductor; File Size73KB，2 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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ZTX557STOA Overview

Bipolar Transistors - BJT PNP High Voltage

ZTX557STOA Parametric

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	Diodes
Product Category	Bipolar Transistors - BJT
RoHS	Details
Mounting Style	Through Hole
Package / Case	TO-92-3
Transistor Polarity	PNP
Configuration	Single
Collector- Emitter Voltage VCEO Max	- 300 V
Collector- Base Voltage VCBO	- 300 V
Emitter- Base Voltage VEBO	- 5 V
Collector-Emitter Saturation Voltage	- 0.3 V
Maximum DC Collector Current	0.5 A
Gain Bandwidth Product fT	75 MHz
Maximum Operating Temperature	+ 150 C
DC Current Gain hFE Max	50 at 10 mA at 10 V
Height	4.01 mm
Length	4.77 mm
Packaging	Bulk
Width	2.41 mm
Continuous Collector Current	- 0.5 A
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	1 W
Factory Pack Quantity	4000
Unit Weight	0.016000 oz

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PNP SILICON PLANAR MEDIUM POWER

HIGH VOLTAGE TRANSISTORS

ISSUE 1 JULY 94

FEATURES

* 300 Volt V

CEO

* 0.5 Amp continuous current

* P

tot

= 1 Watt

ZTX556

ZTX557

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation

Operating and Storage Temperature

Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

ZTX556

-200

-5

-1

-0.5

1.0

E-Line

TO92 Compatible

ZTX557

-300

UNIT

V

A

W

°C

-55 to +200

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

f

T

50

75

ZTX556

ZTX557

UNIT

CONDITIONS.

I

C

=-100

µ

A

I

C

=-10mA*

I

E

=-100

µ

A

V

CB

=-160V

V

CB

=-200V

V

EB

=-4V

I

C

=-50mA, I

B

=-5mA*

I

C

=-50mA, I

B

=-5mA*

IC=-50mA, V

CE

=-10V*

I

C

=-10mA, V

CE

=-10V*

I

C

=-50mA, V

CE

=-10V*

MHz

I

C

=-50mA, V

CE

=-10V

f=100MHz

MIN.

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Emitter Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Base-Emitter

Turn-on Voltage

Static Forward

Current Transfer

Ratio

Transition

Frequency

-200

-5

-0.1

-0.3

-1

300

50

75

MAX

MIN.

-300

-5

-0.1

-0.3

-1

300

MAX

V

µ

A

µ

A

µ

A

V

3-200

ZTX557STOA Related Products

	ZTX557STOA
Description	Bipolar Transistors - BJT PNP High Voltage
Product Attribute	Attribute Value
Manufacturer	Diodes
Product Category	Bipolar Transistors - BJT
RoHS	Details
Mounting Style	Through Hole
Package / Case	TO-92-3
Transistor Polarity	PNP
Configuration	Single
Collector- Emitter Voltage VCEO Max	- 300 V
Collector- Base Voltage VCBO	- 300 V
Emitter- Base Voltage VEBO	- 5 V
Collector-Emitter Saturation Voltage	- 0.3 V
Maximum DC Collector Current	0.5 A
Gain Bandwidth Product fT	75 MHz
Maximum Operating Temperature	+ 150 C
DC Current Gain hFE Max	50 at 10 mA at 10 V
Height	4.01 mm
Length	4.77 mm
Packaging	Bulk
Width	2.41 mm
Continuous Collector Current	- 0.5 A
Minimum Operating Temperature	- 55 C
Pd - Power Dissipation	1 W
Factory Pack Quantity	4000
Unit Weight	0.016000 oz

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