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BUJD103AD118

Description
Bipolar Transistors - BJT TRANS NPN 700V 4A
Categorysemiconductor    Discrete semiconductor   
File Size336KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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Bipolar Transistors - BJT TRANS NPN 700V 4A

BUJD103AD118 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryBipolar Transistors - BJT
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseDPAK-3
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max400 V
Collector- Base Voltage VCBO700 V
Collector-Emitter Saturation Voltage0.29 V
Maximum DC Collector Current4 A
Maximum Operating Temperature+ 150 C
DC Current Gain hFE Max32
Height2.38 mm
Length6.73 mm
PackagingCut Tape
PackagingMouseReel
PackagingReel
Width6.22 mm
DC Collector/Base Gain hfe Min10
Pd - Power Dissipation80 W
Factory Pack Quantity2500
Unit Weight0.009185 oz
BUJD103AD
11 October 2016
NPN power transistor with integrated diode
Product data sheet
1. General description
High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-
parallel E-C diode in a SOT428 (DPAK) surface mountable plastic package.
2. Features and benefits
Fast switching
High voltage capability
Integrated anti-parallel E-C diode
Surface mountable package
Very low switching and conduction losses
3. Applications
DC-to-DC converters
Electronic lighting ballasts
Inverters
Motor control systems
4. Pinning information
Table 1. Pinning information
Pin
1
2
3
mb
Symbol Description
B
C
E
C
base
collector[1]
emitter
mounting base; connected to
collector
1
2
3
Simplified outline
mb
Graphic symbol
C
B
E
sym131
DPAK (SOT428)
[1]
it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package
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