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SIGC81T120R2C

Description
IGBT Chip in NPT-technology
CategoryDiscrete semiconductor    The transistor   
File Size63KB,5 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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SIGC81T120R2C Overview

IGBT Chip in NPT-technology

SIGC81T120R2C Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
Parts packaging codeDIE
package instructionUNCASED CHIP, R-XUUC-N
Reach Compliance Codecompli
ECCN codeEAR99
Is SamacsysN
Other featuresINTEGRATED GATE RESISTOR
Maximum collector current (IC)72 A
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE
Maximum landing time (tf)100 ns
Gate emitter threshold voltage maximum6.5 V
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUUC-N
Number of components1
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
Maximum rise time (tr)100 ns
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)450 ns
Nominal on time (ton)100 ns
Base Number Matches1
SIGC81T120R2C
IGBT Chip in NPT-technology
Features:
1200V NPT technology
low turn-off losses
positive temperature coefficient
easy paralleling
integrated gate resistor
This chip is used for:
power module
BSM 50GD120DN2
Applications:
drives
C
G
E
Chip Type
SIGC81T120R2C
V
CE
1200V
I
C
50A
Die Size
9.08 X 8.98 mm
2
Package
sawn on foil
Mechanical Parameter
Raster size
Emitter pad size
Gate pad size
Area total
Thickness
Wafer size
Max.possible chips per wafer
Passivation frontside
Pad metal
Backside metal
Die bond
Wire bond
Reject ink dot size
Recommended storage environment
9.08 X 8.98
8 x ( 2.6 x 1.78 )
mm
1.46 x 0.8
81.5
200
150
167
Photoimide
3200 nm AlSiCu
Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, <500µm
0.65mm ; max 1.2mm
Store in original container, in dry nitrogen, in dark
environment, < 6 month at an ambient temperature of 23°C
µm
mm
2
Edited by INFINEON Technologies, AIM PMD D CID CLS, L7161MM, Edition 2.1, 14.10.2008

SIGC81T120R2C Related Products

SIGC81T120R2C SIGC81T120R2CX1SA2
Description IGBT Chip in NPT-technology Insulated Gate Bipolar Transistor, 72A I(C), 1200V V(BR)CES, N-Channel, DIE
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? conform to conform to
Parts packaging code DIE DIE
package instruction UNCASED CHIP, R-XUUC-N UNCASED CHIP, R-XUUC-N
Reach Compliance Code compli compliant
ECCN code EAR99 EAR99
Is Samacsys N N
Other features INTEGRATED GATE RESISTOR INTEGRATED GATE RESISTOR
Maximum collector current (IC) 72 A 72 A
Collector-emitter maximum voltage 1200 V 1200 V
Configuration SINGLE SINGLE
JESD-30 code R-XUUC-N R-XUUC-N
Number of components 1 1
Maximum operating temperature 150 °C 150 °C
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form UNCASED CHIP UNCASED CHIP
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form NO LEAD NO LEAD
Terminal location UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications POWER CONTROL POWER CONTROL
Transistor component materials SILICON SILICON
Nominal off time (toff) 450 ns 450 ns
Nominal on time (ton) 100 ns 100 ns
Base Number Matches 1 1
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