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THM72V2010ATG-60

Description
2,097,152 WORDS X 72 BIT DYNAMIC RAM MODULE
Categorystorage    storage   
File Size2MB,30 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

THM72V2010ATG-60 Overview

2,097,152 WORDS X 72 BIT DYNAMIC RAM MODULE

THM72V2010ATG-60 Parametric

Parameter NameAttribute value
Parts packaging codeDIMM
Contacts168
Reach Compliance Codeunknow
access modeFAST PAGE
Maximum access time60 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 codeR-XDMA-N168
memory density150994944 bi
Memory IC TypeFAST PAGE DRAM MODULE
memory width72
Number of functions1
Number of ports1
Number of terminals168
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize2MX72
Output characteristics3-STATE
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Certification statusNot Qualified
refresh cycle2048
Maximum supply voltage (Vsup)3.47 V
Minimum supply voltage (Vsup)3.13 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal locationDUAL
Base Number Matches1
TOSHIBA
THM72V2010AG/ATG-60/70
PRELIMINARY
2,097,152 WORDS X 72 BIT DYNAMIC RAM MODULE
Description
The THM72V2010AG/ATG is a 2,097,152 words by 72 bits dynamic RAM module which assembled 9 pcs of TC51V17800ANJ/ANT
on the printed circuit board. This module is optimized for application to the systems which are required high density and large capacity
such as main memory of the computers and as image memory systems, and to the others which are requested compact size.
Features
• 2,097,152 words by 72 bits organization
• Fast access time and cycle time
• Single power supply of 3.3V
±
5%
• Low Power
- 4,095mW MAX. Operating
- (THMxxxxxx-60)
- 3,470mW MAX. Operating
- (THMxxxxxx-70)
- 50.4mW MAX. Standby
• Read-Modify-Write, CAS before RAS refresh,
RAS-only refresh, Hidden refresh, and Fast
Page Mode capability
• All inputs and outputs TTL compatible
• 2,048 refresh cycles/32ms
• Package: 168pin Gold Contact
THM72V2010AG-x
SOJ type
THM72V2010ATG-x
TSOP type
Key Parameters
-60
t
RAC
t
AA
RAS Access
Time
Column
Address
Access Time
CAS Access
Time
Cycle Time
Fast Page
Mode Cycle
Time
60ns
-70
PD0
70ns
PD1
PD2
35ns
40ns
PD3
PD4
20ns
25ns
PD5
PD6
PD7
40ns
45ns
ID0
ID1
-60
“H”
“L”
“L”
“H”
“L”
“H”
“H”
“L”
V
SS
V
SS
-70
“H”
“L”
“L”
“H”
“L”
“L”
“H”
“L”
V
SS
V
SS
t
CAC
t
RC
t
PC
110ns 130ns
Note “H”: High Level (buffered)
“L”: Low Level (buffered)
1. This technical data may be controlled under U.S. Export Administration Regulations and may be subject to the approval of the U.S. Department of Commerce prior to export. Any export or re-export, directly or indi-
rectly, in contravention of the U.S. Export Administration Regulations is strictly prohibited.
2. LIFE SUPPORT POLICY
Toshiba products described in this document are not authorized for use as critical components in life support systems without the written consent of the appropriate officer of Toshiba America, Inc. Life support sys-
tems are either systems intended for surgical implant in the body or systems which sustain life.
A critical component in any component of a life support system whose failure to perform may cause a malfunction of the life support system, or may affect its safety or effectiveness.
3. The information in this document has been carefully checked and is believed to be reliable; however no responsibility can be assumed for inaccuracies that may not have been caught. All information in this data book
is subject to change without prior notice. Furthermore, Toshiba cannot assume responsibility for the use of any license under the patent rights of Toshiba or any third parties.
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC
.
1

THM72V2010ATG-60 Related Products

THM72V2010ATG-60 THM72V2010AG-60 THM72V2010AG THM72V2010AG-70 THM72V2010ATG-70
Description 2,097,152 WORDS X 72 BIT DYNAMIC RAM MODULE 2,097,152 WORDS X 72 BIT DYNAMIC RAM MODULE 2,097,152 WORDS X 72 BIT DYNAMIC RAM MODULE 2,097,152 WORDS X 72 BIT DYNAMIC RAM MODULE 2,097,152 WORDS X 72 BIT DYNAMIC RAM MODULE
Parts packaging code DIMM DIMM - DIMM DIMM
Contacts 168 168 - 168 168
Reach Compliance Code unknow unknow - unknow unknow
access mode FAST PAGE FAST PAGE - FAST PAGE FAST PAGE
Maximum access time 60 ns 60 ns - 70 ns 70 ns
Other features RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH - RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 code R-XDMA-N168 R-XDMA-N168 - R-XDMA-N168 R-XDMA-N168
memory density 150994944 bi 150994944 bi - 150994944 bi 150994944 bi
Memory IC Type FAST PAGE DRAM MODULE FAST PAGE DRAM MODULE - FAST PAGE DRAM MODULE FAST PAGE DRAM MODULE
memory width 72 72 - 72 72
Number of functions 1 1 - 1 1
Number of ports 1 1 - 1 1
Number of terminals 168 168 - 168 168
word count 2097152 words 2097152 words - 2097152 words 2097152 words
character code 2000000 2000000 - 2000000 2000000
Operating mode ASYNCHRONOUS ASYNCHRONOUS - ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C - 70 °C 70 °C
organize 2MX72 2MX72 - 2MX72 2MX72
Output characteristics 3-STATE 3-STATE - 3-STATE 3-STATE
Package body material UNSPECIFIED UNSPECIFIED - UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY - MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Certification status Not Qualified Not Qualified - Not Qualified Not Qualified
refresh cycle 2048 2048 - 2048 2048
Maximum supply voltage (Vsup) 3.47 V 3.47 V - 3.47 V 3.47 V
Minimum supply voltage (Vsup) 3.13 V 3.13 V - 3.13 V 3.13 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V - 3.3 V 3.3 V
surface mount NO NO - NO NO
technology CMOS CMOS - CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL - COMMERCIAL COMMERCIAL
Terminal form NO LEAD NO LEAD - NO LEAD NO LEAD
Terminal location DUAL DUAL - DUAL DUAL
Base Number Matches 1 1 - 1 1
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