P600D datasheet, PDF - EEWORLD Datasheet

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P600D: Description6 A, 200 V, SILICON, RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size185KB，3 Pages; ManufacturerWeitron Technology; Websitehttp://weitron.com.tw/

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P600D Overview

6 A, 200 V, SILICON, RECTIFIER DIODE

P600D Parametric

Parameter Name	Attribute value
Maker	Weitron Technology
package instruction	O-PALF-W2
Reach Compliance Code	unknown
Other features	HIGH RELIABILITY
application	GENERAL PURPOSE
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.95 V
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	400 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	6 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	200 V
Maximum reverse current	10 µA
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

P600D Preview

P600A thru P600M

6.0 Amp Silicon Rectifiers

P b

Lead(Pb)-Free

Features:

* Low forward voltage drop

* High current capability

* High reliability

* High surge current capability

REVERSE VOLTAGE

50 TO 1000 VOLTS

FORWARD CURRENT

6.0 AMPERES

Mechanical Data:

* Case : Molded plastic.

* Epoxy : UL 94V-0 rate ﬂame retardant.

* Lead : Axial leads, solderable per MIL-STD-202, method 208 guranteed.

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 1.65 grams

R-6

R-6 Outline Dimensions

25.4

8.6

9.1

1.2

1.3

8.6

9.1

WEITRON

http://www.weitron.com.tw

1/3

16-Dec-03

P600A thru P600M

Maximum Ratings and Electrical Characteristics

Rating 25˚C Ambient Temperature Unless Otherwise Speciﬁed.

Single Phase Half Wave, 60Hz , Resistive or Inductive Load.

For Capacitive Load, Derate Current by 20%.

Characteristics

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectiﬁed Current

.375”(9.5m) Lead length at T

=60˚C

Peak Forward Surge Current,

8.3 ms Single Half Sine-Wave

Superimposed on Rated Load (JEDEC Method)

Maximum Instantaneous at 6.0A DC

Maximum DC Reverse Current @Tj=25˚C

At Rated DC Blocking Voltage @Tj=100˚C

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance (Note 2)

Operating Temperature Range

Storage Temperature Range

Symbol P600A P600B P600D P600G P600J P600K P600M Unit

RRM

RMS

F(AV)

100

200

140

200

400

280

400

6.0

600

420

600

800

560

800

1000

700

1000

FSM

400

θJA

STG

0.95

10.0

400

100

-65 to +175

µA

˚C/W

˚C

NOTES: 1. Measured at 1.0MHz applied reverse voltage of 4.0V D.C.

2. Thermal Resistance from Junction to Ambient .375”(9.5mm) lead length.

WEITRON

http://www.weitron.com.tw

2/3

16-Dec-03

P600A thru P600M

RATING AND CHARACTERISTIC CURVES

500

INSTANTANEOUS FORWARD CURRENT,(A)

AVERAGE FORWARD CURRENT,(A)

PC BOARD

Standard PC Board

Mounting

Single Phase Half Wave 60Hz

Resistive Or Inductive Load

Ground Plane

1" X 1" Copper

surface area

PC BOARD

Recommended

PC Board

Mounting

100

Tj=25°C

Pulse Width 300us

1% Duty Cycle

100

120

140

160

180

200

AMBIENT TEMPERATURE,(°C)

FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE

1.0

1.2

1.4

1.6

1.8

2.0

PEAK FORWARD SURGE CURRENT,(A)

500

400

300

Tj=25ºC

200

100

8.3ms Single Half

Sine Wave

JEDEC method

FORWARD VOLT

AGE(V)

FIG.1-TYPICAL FORWARD CHARACTERISTICS

100

NUMBER OF CYCLES AT 60Hz

FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT

REVERSE LEAKAGE CURRENT, ( A)

Tj=100°C

1.0

THERMAL RESISTANCE, ( C/W)

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

Tj=25°C

0.1

0.01

100 120 140

PERCENT OF RATED PEAK REVERSE VOLTAGE(%)

EQUAL LEAD LENGTH TO HEAT SINK, INCHES

FIG.3 - TYPICAL REVERSE CHARACTERISTICS

FIG.5 - TYPICAL THERMAL RESISTANCE VS. LEAD LENGTH

WEITRON

http://www.weitron.com.tw

3/3

16-Dec-03

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P600D Related Products

	P600D	P600M	P600K	P600J
Description	6 A, 200 V, SILICON, RECTIFIER DIODE	6 A, 1000 V, SILICON, RECTIFIER DIODE	6 A, 800 V, SILICON, RECTIFIER DIODE	6 A, 600 V, SILICON, RECTIFIER DIODE
Maker	Weitron Technology	Weitron Technology	Weitron Technology	Weitron Technology
Reach Compliance Code	unknown	unknow	unknow	unknow
Other features	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
application	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	0.95 V	0.95 V	0.95 V	0.95 V
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Maximum non-repetitive peak forward current	400 A	400 A	400 A	400 A
Number of components	1	1	1	1
Phase	1	1	1	1
Number of terminals	2	2	2	2
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output current	6 A	6 A	6 A	6 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum repetitive peak reverse voltage	200 V	1000 V	800 V	600 V
Maximum reverse current	10 µA	10 µA	10 µA	10 µA
surface mount	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL
package instruction	O-PALF-W2	O-PALF-W2	-	O-PALF-W2

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