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P600J

Description
6 A, 600 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size185KB,3 Pages
ManufacturerWeitron Technology
Websitehttp://weitron.com.tw/
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P600J Overview

6 A, 600 V, SILICON, RECTIFIER DIODE

P600J Parametric

Parameter NameAttribute value
MakerWeitron Technology
package instructionO-PALF-W2
Reach Compliance Codeunknow
Other featuresHIGH RELIABILITY
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.95 V
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current400 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current6 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage600 V
Maximum reverse current10 µA
surface mountNO
Terminal formWIRE
Terminal locationAXIAL

P600J Preview

P600A thru P600M
6.0 Amp Silicon Rectifiers
P b
Lead(Pb)-Free
Features:
* Low forward voltage drop
* High current capability
* High reliability
* High surge current capability
REVERSE VOLTAGE
50 TO 1000 VOLTS
FORWARD CURRENT
6.0 AMPERES
Mechanical Data:
* Case : Molded plastic.
* Epoxy : UL 94V-0 rate flame retardant.
* Lead : Axial leads, solderable per MIL-STD-202, method 208 guranteed.
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 1.65 grams
R-6
R-6 Outline Dimensions
25.4
-
8.6
9.1
1.2
1.3
8.6
9.1
WEITRON
http://www.weitron.com.tw
1/3
16-Dec-03
P600A thru P600M
Maximum Ratings and Electrical Characteristics
Rating 25˚C Ambient Temperature Unless Otherwise Specified.
Single Phase Half Wave, 60Hz , Resistive or Inductive Load.
For Capacitive Load, Derate Current by 20%.
Characteristics
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375”(9.5m) Lead length at T
A
=60˚C
Peak Forward Surge Current,
8.3 ms Single Half Sine-Wave
Superimposed on Rated Load (JEDEC Method)
Maximum Instantaneous at 6.0A DC
Maximum DC Reverse Current @Tj=25˚C
At Rated DC Blocking Voltage @Tj=100˚C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
Symbol P600A P600B P600D P600G P600J P600K P600M Unit
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
200
140
200
400
280
400
6.0
600
420
600
800
560
800
1000
700
1000
V
V
V
A
I
FSM
400
A
V
F
I
R
C
J
R
θJA
TJ
T
STG
0.95
10.0
400
100
10
-65 to +175
-65 to +175
V
µA
pF
˚C/W
˚C
˚C
NOTES: 1. Measured at 1.0MHz applied reverse voltage of 4.0V D.C.
2. Thermal Resistance from Junction to Ambient .375”(9.5mm) lead length.
WEITRON
http://www.weitron.com.tw
2/3
16-Dec-03
P600A thru P600M
RATING AND CHARACTERISTIC CURVES
500
INSTANTANEOUS FORWARD CURRENT,(A)
AVERAGE FORWARD CURRENT,(A)
6
5
4
3
2
1
0
0
20
PC BOARD
Standard PC Board
Mounting
40
60
80
Single Phase Half Wave 60Hz
Resistive Or Inductive Load
Ground Plane
1" X 1" Copper
surface area
PC BOARD
Recommended
PC Board
Mounting
100
40
10
Tj=25°C
Pulse Width 300us
1% Duty Cycle
100
120
140
160
180
200
AMBIENT TEMPERATURE,(°C)
1
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
.6
.8
1.0
1.2
1.4
1.6
1.8
2.0
PEAK FORWARD SURGE CURRENT,(A)
500
400
300
Tj=25ºC
200
100
0
8.3ms Single Half
Sine Wave
JEDEC method
FORWARD VOLT
AGE(V)
FIG.1-TYPICAL FORWARD CHARACTERISTICS
100
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
REVERSE LEAKAGE CURRENT, ( A)
10
Tj=100°C
1.0
THERMAL RESISTANCE, ( C/W)
25
20
15
10
5
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Tj=25°C
0.1
0.01
0
20
40
60
80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE(%)
EQUAL LEAD LENGTH TO HEAT SINK, INCHES
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
FIG.5 - TYPICAL THERMAL RESISTANCE VS. LEAD LENGTH
WEITRON
http://www.weitron.com.tw
3/3
16-Dec-03

P600J Related Products

P600J P600D P600M P600K
Description 6 A, 600 V, SILICON, RECTIFIER DIODE 6 A, 200 V, SILICON, RECTIFIER DIODE 6 A, 1000 V, SILICON, RECTIFIER DIODE 6 A, 800 V, SILICON, RECTIFIER DIODE
Maker Weitron Technology Weitron Technology Weitron Technology Weitron Technology
Reach Compliance Code unknow unknown unknow unknow
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.95 V 0.95 V 0.95 V 0.95 V
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 400 A 400 A 400 A 400 A
Number of components 1 1 1 1
Phase 1 1 1 1
Number of terminals 2 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C
Maximum output current 6 A 6 A 6 A 6 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 600 V 200 V 1000 V 800 V
Maximum reverse current 10 µA 10 µA 10 µA 10 µA
surface mount NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL
package instruction O-PALF-W2 O-PALF-W2 O-PALF-W2 -
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