BPW85, BPW85A, BPW85B, BPW85C
www.vishay.com
Vishay Semiconductors
Silicon NPN Phototransistor
FEATURES
• Package type: leaded
• Package form: T-1
• Dimensions (in mm): Ø 3
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
20815
• Angle of half sensitivity:
ϕ
= ± 25°
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
BPW85 is a silicon NPN phototransistor with high radiant
sensitivity in clear, T-1 plastic package. It is sensitive to
visible and near infrared radiation.
APPLICATIONS
• Detector in electronic control and drive circuits
PRODUCT SUMMARY
COMPONENT
BPW85
BPW85A
BPW85B
BPW85C
Note
• Test condition see table “Basic Characteristics”
I
ca
(mA)
0.8 to 8
0.8 to 2.5
1.5 to 4
3 to 8
ϕ
(deg)
± 25
± 25
± 25
± 25
λ
0.1
(nm)
450 to 1080
450 to 1080
450 to 1080
450 to 1080
ORDERING INFORMATION
ORDERING CODE
BPW85
BPW85A
BPW85B
BPW85C
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
Bulk
Bulk
Bulk
REMARKS
MOQ: 5000 pcs, 5000 pcs/bulk
MOQ: 5000 pcs, 5000 pcs/bulk
MOQ: 5000 pcs, 5000 pcs/bulk
MOQ: 5000 pcs, 5000 pcs/bulk
PACKAGE FORM
T-1
T-1
T-1
T-1
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
t
≤
3 s, 2 mm from case
Connected with Cu wire Ø 0.14 mm
2
t
p
/T = 0.5, t
p
≤
10 ms
T
amb
≤
55 °C
TEST CONDITION
SYMBOL
V
CEO
V
ECO
I
C
I
CM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
70
5
50
100
100
100
-40 to +100
-40 to +100
260
450
UNIT
V
V
mA
mA
mW
°C
°C
°C
°C
K/W
Rev. 2.1, 04-Aug-14
Document Number: 81531
1
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BPW85, BPW85A, BPW85B, BPW85C
www.vishay.com
Vishay Semiconductors
125
P
V
- Power Dissipation (mW)
100
75
R
thJA
= 450 K/W
50
25
0
0
94 8308
20
40
60
80
100
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Collector emitter breakdown voltage
Collector emitter dark current
Collector emitter capacitance
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Collector emitter saturation voltage
Turn-on time
Turn-off time
Cut-off frequency
E
e
= 1
mW/cm
2
,
λ
= 950 nm,
I
C
= 0.1 mA
TEST CONDITION
I
C
= 1 mA
V
CE
= 20 V, E = 0
V
CE
= 5 V, f = 1 MHz, E = 0
SYMBOL
V
(BR)CEO
I
CEO
C
CEO
ϕ
λ
p
λ
0.1
V
CEsat
t
on
t
off
f
c
2.0
2.3
180
MIN.
70
1
3
± 25
850
450 to 1080
0.3
200
TYP.
MAX.
UNIT
V
nA
pF
deg
nm
nm
V
μs
μs
kHz
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω
TYPE DEDICATED CHARACTERISTICS
PARAMETER
TEST CONDITION
E
e
= 1 mW/cm
2
,
λ
= 950 nm,
V
CE
= 5 V
PART
BPW85
Collector light current
BPW85A
BPW85B
BPW85C
SYMBOL
I
ca
I
ca
I
ca
I
ca
MIN.
0.8
0.8
1.5
3.0
TYP.
MAX.
8.0
2.5
4.0
8.0
UNIT
mA
mA
mA
mA
Rev. 2.1, 04-Aug-14
Document Number: 81531
2
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BPW85, BPW85A, BPW85B, BPW85C
www.vishay.com
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
10
4
Vishay Semiconductors
10
I
ca
- Collector Light Current (mA)
I
CEO
- Collector Dark Current (nA)
λ
1
BPW 85 A
= 950 nm
E
e
= 1 mW/cm
2
10
3
0.5 mW/cm
2
0.2 mW/cm
2
0.1 mW/cm
2
10
2
V
CE
= 20 V
0.1
0.05 mW/cm
2
10
1
10
94 8304
20
40
60
80
100
0.01
0.1
94 8275
T
amb
- Ambient Temperature (°C)
100
1
10
V
CE
- Collector Emitter Voltage (V)
Fig. 2 - Collector Dark Current vs. Ambient Temperature
Fig. 5 - Collector Light Current vs. Collector Emitter Voltage
2.0
10
I
ca rel
- Relative Collector Current
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
20
40
60
80
100
V
CE
= 5 V
E
e
= 1 mW/cm
2
λ
= 950 nm
I
ca
- Collector Light Current (mA)
BPW 85 B
E
e
= 1 mW/cm
2
0.5 mW/cm
2
1
0.2 mW/cm
2
0.1 mW/cm
2
0.05 mW/cm
2
0.1
λ
= 950 nm
0.01
0.1
1
10
V
CE
- Collector Emitter Voltage (V)
100
94 8239
T
amb
- Ambient Temperature (°C)
94 8276
Fig. 3 - Relative Collector Current vs. Ambient Temperature
Fig. 6 - Collector Light Current vs. Collector Emitter Voltage
10
I
ca
- Collector Light Current (mA)
I
ca
- Collector Light Current (mA)
10
BPW85B
1
BPW85C
E
e
= 1 mW/cm
2
0.5 mW/cm
2
1
0.2 mW/cm
2
0.1 mW/cm
2
0.05 mW/cm
2
0.1
BPW85A
0.1
0.01
0.01
94 8271
V
CE
= 5 V
λ
= 950 nm
0.1
1
10
E
e
- Irradiance (mW/cm2)
0.01
0.1
94 8277
BPW 85 C
λ
= 950 nm
100
1
10
V
CE
- Collector Emitter Voltage (V)
Fig. 4 - Collector Light Current vs. Irradiance
Fig. 7 - Collector Light Current vs. Collector Emitter Voltage
Rev. 2.1, 04-Aug-14
Document Number: 81531
3
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BPW85, BPW85A, BPW85B, BPW85C
www.vishay.com
Vishay Semiconductors
C
CEO
- Collector Emitter Capacitance (pF)
S (λ)
rel
- Relative Spectral Sensitivity
10
f = 1 MHz
8
1.0
0.8
0.6
0.4
0.2
0
400
600
800
1000
λ
- Wavelength (nm)
6
4
2
0
0.1
1
10
100
94 8348
94 8294
V
CE
- Collector Emitter Voltage (V)
Fig. 8 - Collector Emitter Capacitance vs.
Collector Emitter Voltage
Fig. 10 - Relative Spectral Sensitivity vs. Wavelength
8
0°
S
rel
- Relative Radiant Sensitivity
10°
20°
30°
t
on
/t
off
- Turn-on/Turn-off Time (µs)
6
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
4
t
off
2
t
on
0
0
2
4
6
8
10
12
14
94 8293
I
C
- Collector Current (mA)
94 8295
Fig. 9 - Turn-on/Turn-off Time vs. Collector Current
Fig. 11 - Relative Radiant Sensitivity vs. Angular Displacement
Rev. 2.1, 04-Aug-14
Document Number: 81531
4
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
ϕ
- Angular Displacement
V
CE
= 5 V
R
L
= 100
Ω
λ
= 950 nm
BPW85, BPW85A, BPW85B, BPW85C
www.vishay.com
PACKAGE DIMENSIONS
in millimeters
Ø 3.2 ± 0.15
Vishay Semiconductors
E
C
Ø 3 ± 0.1
4.4 ± 0.1
3.4 ± 0.1
(2.5)
R1
.4
5
he
(p
re
)
7 ± 0.3
< 0.6
34.4 ± 0.5
AREA NOT PLANE
1.05 ± 0.1
0.5
- 0.1
2.54 nom.
1.5 ± 0:5
+ 0.2
0.4 ± 0.05
Drawing-No.: 6.544-5054.01-4
Issue: 5; 28.07.14
technical drawings
according to DIN
specifications
Rev. 2.1, 04-Aug-14
Document Number: 81531
5
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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