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BPW85B

Description
Phototransistors NPN Phototransistor 70V 100mW 850nm
CategoryLED optoelectronic/LED   
File Size101KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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BPW85B Overview

Phototransistors NPN Phototransistor 70V 100mW 850nm

BPW85B Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerVishay
Product CategoryPhototransistors
RoHSDetails
ProductPhototransistors
Package / CaseT-1
Mounting StyleThrough Hole
Peak Wavelength850 nm
Maximum On-State Collector Current50 mA
Collector- Emitter Voltage VCEO Max70 V
Dark Current200 nA
Pd - Power Dissipation100 mW
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 100 C
Height4.5 mm
Length3.4 mm
Lens Color/StyleClear
PackagingBulk
TypeChip
Wavelength850 nm
Width3.4 mm
Collector-Emitter Breakdown Voltage70 V
Collector-Emitter Saturation Voltage0.3 V
Half Intensity Angle Degrees25 deg
Light Current4 mA
NumOfPackaging1
Factory Pack Quantity5000
BPW85, BPW85A, BPW85B, BPW85C
www.vishay.com
Vishay Semiconductors
Silicon NPN Phototransistor
FEATURES
• Package type: leaded
• Package form: T-1
• Dimensions (in mm): Ø 3
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
20815
• Angle of half sensitivity:
ϕ
= ± 25°
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
BPW85 is a silicon NPN phototransistor with high radiant
sensitivity in clear, T-1 plastic package. It is sensitive to
visible and near infrared radiation.
APPLICATIONS
• Detector in electronic control and drive circuits
PRODUCT SUMMARY
COMPONENT
BPW85
BPW85A
BPW85B
BPW85C
Note
• Test condition see table “Basic Characteristics”
I
ca
(mA)
0.8 to 8
0.8 to 2.5
1.5 to 4
3 to 8
ϕ
(deg)
± 25
± 25
± 25
± 25
λ
0.1
(nm)
450 to 1080
450 to 1080
450 to 1080
450 to 1080
ORDERING INFORMATION
ORDERING CODE
BPW85
BPW85A
BPW85B
BPW85C
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
Bulk
Bulk
Bulk
REMARKS
MOQ: 5000 pcs, 5000 pcs/bulk
MOQ: 5000 pcs, 5000 pcs/bulk
MOQ: 5000 pcs, 5000 pcs/bulk
MOQ: 5000 pcs, 5000 pcs/bulk
PACKAGE FORM
T-1
T-1
T-1
T-1
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
t
3 s, 2 mm from case
Connected with Cu wire Ø 0.14 mm
2
t
p
/T = 0.5, t
p
10 ms
T
amb
55 °C
TEST CONDITION
SYMBOL
V
CEO
V
ECO
I
C
I
CM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
70
5
50
100
100
100
-40 to +100
-40 to +100
260
450
UNIT
V
V
mA
mA
mW
°C
°C
°C
°C
K/W
Rev. 2.1, 04-Aug-14
Document Number: 81531
1
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

BPW85B Related Products

BPW85B BPW85C
Description Phototransistors NPN Phototransistor 70V 100mW 850nm Phototransistors NPN Phototransistor 70V 100mW 850nm
Product Attribute Attribute Value Attribute Value
Manufacturer Vishay Vishay
Product Category Phototransistors Phototransistors
RoHS Details Details
Product Phototransistors Phototransistors
Package / Case T-1 T-1
Mounting Style Through Hole Through Hole
Peak Wavelength 850 nm 850 nm
Maximum On-State Collector Current 50 mA 50 mA
Collector- Emitter Voltage VCEO Max 70 V 70 V
Dark Current 200 nA 200 nA
Pd - Power Dissipation 100 mW 100 mW
Minimum Operating Temperature - 40 C - 40 C
Maximum Operating Temperature + 100 C + 100 C
Height 4.5 mm 4.5 mm
Length 3.4 mm 3.4 mm
Lens Color/Style Clear Clear
Packaging Bulk Bulk
Type Chip Chip
Wavelength 850 nm 850 nm
Width 3.4 mm 3.4 mm
Collector-Emitter Breakdown Voltage 70 V 70 V
Collector-Emitter Saturation Voltage 0.3 V 0.3 V
Half Intensity Angle Degrees 25 deg 25 deg
Light Current 4 mA 8 mA
NumOfPackaging 1 1
Factory Pack Quantity 5000 5000
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