Composite Transistors
XN0121E
(XN121E)
Silicon NPN epitaxial planar type
Unit: mm
For switching/digital circuits
■
Features
•
Two elements incorporated into one package
(Emitter-coupled transistors with built-in resistor)
•
Reduction of the mounting area and assembly cost by one half
3
2.90
+0.20
–0.05
1.9
±0.1
(0.95) (0.95)
4
5
0.16
+0.10
–0.06
1.50
+0.25
–0.05
2.8
+0.2
–0.3
2
0.30
+0.10
–0.05
10˚
1
■
Basic Part Number
•
UNR221E (UN221E)
×
2
1.1
+0.2
–0.1
(0.65)
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
50
50
100
300
150
−55
to
+150
Unit
V
V
mA
mW
°C
°C
1: Collector (Tr1)
2: Collector (Tr2)
3: Base (Tr2)
EIAJ: SC-74A
0 to 0.1
■
Absolute Maximum Ratings
T
a
=
25°C
4: Emitter
5: Base (Tr1)
Mini5-G1 Package
Marking Symbol: AQ
Internal Connection
3
4
5
Tr2
1.1
+0.3
–0.1
Tr1
1
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
h
FE
Ratio
*
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
h
FE(Small
/Large)
2
Conditions
I
C
=
10
µA,
I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
10 V, I
C
=
5 mA
V
CE
=
10 V, I
C
=
5 mA
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
6 V, R
L
=
1 kΩ
Min
50
50
Typ
Max
Unit
V
V
µA
µA
mA
0.1
0.5
0.2
60
0.50
0.99
0.25
4.9
0.2
−30%
47
2.14
+30%
V
CE(sat)
V
OH
V
OL
R
1
R
1
/ R
2
f
T
V
V
V
kΩ
MHz
V
CB
=
10 V, I
E
= −2
mA, f
=
200 MHz
150
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Ratio between 2 elements
Note) The part number in the parenthesis shows conventional part number.
Publication date: June 2003
SJJ00024BED
0.4
±0.2
5˚
1
XN0121E
P
T
T
a
500
60
I
C
V
CE
I
B
= 1.0 mA 0.7 mA
T
a
=
25°C
0.9 mA
0.6 mA
0.8 mA
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
100
I
C
/ I
B
=
10
Total power dissipation P
T
(mW)
400
50
Collector current I
C
(mA)
10
40
0.3 mA 0.2 mA
0.4 mA
0.5 mA
0.1 mA
300
30
1
T
a
=
75°C
200
20
25°C
0.1
100
10
−25°C
0.01
0.1
1
10
100
0
0
0
40
80
120
160
0
2
4
6
8
10
12
Ambient temperature T
a
(
°C
)
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
h
FE
I
C
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
160
V
CE
=
10 V
6
C
ob
V
CB
f
=
1MHz
I
E
=
0
T
a
=
25°C
I
O
V
IN
10
4
V
O
=
5 V
T
a
=
25°C
Forward current transfer ratio h
FE
5
25°C
−25°C
80
4
Output current I
O
(µA)
1
10
100
120
T
a
=
75°C
10
3
3
10
2
2
40
10
1
0
1
10
100
1 000
0
0.1
1
1.5
2.0
2.5
3.0
3.5
4.0
Collector current I
C
(mA)
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
V
IN
I
O
100
V
O
=
0.2 V
T
a
=
25°C
Input voltage V
IN
(V)
10
1
0.1
0.01
0.1
1
10
100
Output current I
O
(mA)
2
SJJ00024BED
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
•
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
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permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
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